Reducing indium consumption in transparent conductive oxide (TCO) layers is crucial for mass production of silicon heterojunction (SHJ) solar cells. In this contribution, optical simulation-assisted design and optimization of SHJ solar cells featuring MoO_x hole collectors with ultra-thin TCO layers is performed. Firstly, bifacial SHJ solar cells with MoO_x as the hole transport layer (HTL) and three types of n-contact as electron transport layer (ETL) are fabricated with 50 nm thick ITO on both sides. It is found that bilayer (nc-Si:H/a-Si:H) and trilayer (nc-SiO_x:H/nc-Si:H/a-Si:H) as n-contacts performed electronically and optically better than monolayer (a-Si:H) in bifacial SHJ cells, respectively. Then, as suggested by optical simulations, the same stack of tungsten-doped indium oxide (IWO) and optimized MgF₂ layers are applied on both sides of front/back-contacted SHJ solar cells. Devices endowed with 10 nm thick IWO and bilayer n-contact exhibit a certified efficiency of 21.66% and 20.66% when measured from MoO_x and n-contact side, respectively. Specifically, when illuminating from the MoO_x side, the short-circuit current density and the fill factor remain well above 40 mA cm⁻² and 77%, respectively. Compared to standard front/rear TCO thicknesses (75 nm/150 nm) deployed in monofacial SHJ solar cells, this represents over 90% TCO reduction. As for bifacial cells featuring 50 nm thick IWO layers, a champion device with a bilayer n-contact as ETL is obtained, which exhibits certified conversion efficiency of 23.25% and 22.75% when characterized from the MoO_x side and the n-layer side, respectively, with a bifaciality factor of 0.98. In general, by utilizing a n-type bilayer stack, bifaciality factor is above 0.96 and it can be further enhanced up to 0.99 by switching to a n-type trilayer stack. Again, compared to the aforementioned standard front/rear TCO thicknesses, this translates to a TCO reduction of more than 67%.

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The growing global energy demand increases the need for renewable energy sources. This increase requires land to be occupied, competing with other activities such as agriculture and residency. In such a situation, renewable energy sources expand to other environments like the ocean. However, this new scene poses some challenges, such as the effect of waves on photovoltaic (PV) performance. Consequently, this study aims to evaluate the power output of an Offshore Floating PV (OFPV) system located in the North Sea considering the effect of the waves. A 3D mechanical movement model, which has been validated with data from a real system, is developed for this purpose. A sensitivity analysis is conducted to determine how the size of fluctuations depends on the dimensions of the floater. The main outcome is that a heavy and wide floater aligned with the most common wind direction reduces angle variations. Results from DC power simulations show that sea fluctuations have a negative yet small influence on PV power production. Over the course of the year, these losses amount to just 0.1% of the annual energy yield. However, a hypothetical optimally-tilted PV system placed on water would still generate 14.6% more DC power output than the floating one. On the AC side, laboratory experiments show that these oscillations negatively affect the inverter efficiency during rough sea conditions by a decrease of over 2 percentage points compared to a still system.

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Interdigitated back contact (IBC) architecture can yield among the highest silicon wafer-based solar cell conversion efficiencies. Since both polarities are realized on the rear side, there is a definite need for a patterning step. Some of the common patterning techniques involve photolithography, inkjet patterning, and laser ablation. This work introduces a novel patterning technique for structuring the rear side of IBC solar cells using the enhanced oxidation characteristics under the locally laser-doped n⁺⁺ back surface field (BSF) regions with high-phosphorous surface concentrations. Phosphosilicate glass layers deposited via POCl₃ diffusion serve as a precursor layer for the formation of local heavily laser-doped n⁺⁺ BSF regions. The laser-doped n⁺⁺ BSF regions exhibit a 2.6-fold increase in oxide thickness compared to the nonlaser-doped n⁺ BSF regions after undergoing high-temperature wet thermal oxidation. The utilization of oxide thickness selectivity under laser-doped and nonlaser-doped regions serves two purposes in the context of the IBC solar cell, first patterning rear side and second acting as a masking layer for the subsequent boron diffusion. Proof-of-concept solar cells are fabricated using this novel patterning technique with a mean conversion efficiency of 20.41%.

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Solar photovoltaic (PV) energy is variable. The output power can change considerably in a matter of minutes, imposing challenges on the control of systems connected downstream. The power from these systems can be smoothed using electric storage, potentially increasing the system cost. An alternative is to deliberately curtail the power before it starts to change. This strategy relies on ultra-short-term forecasting to determine the curtailment point. Unfortunately, forecasting is prone to errors and high uncertainty even in the very short-term, leading to control errors. We propose an active power curtailment control strategy for a stand-alone solar photovoltaic system powering an electrolyzer. Our work's novelty relies on the controller's ability to deal with large forecasting errors and high uncertainty, combining artificial intelligence for predicting the power ramps and fuzzy logic to account for imperfect prediction. We validated our approach using a hardware emulator of the photovoltaic system, power converter and electrolyzer. Under clear sky conditions, the curtailment results in unnecessary energy loss, while under variable irradiance, the controller successfully smooths the power ramps within 10% of the PV system's nominal power. Although our approach was designed for a stand-alone system, its concept can be directly applied to grid-connected systems as well.

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The surge in global solar photovoltaic (PV) deployment as a measure to combat climate change is undeniable. However, this growth comes with its own set of challenges, particularly concerning the materials required for silicon-based PV modules. In this study, we quantify future material demand for silicon-based PV modules, considering technological advancements in PV module efficiency and material intensity. The annual material demand is projected to increase significantly for indium (38–286 times), silver (4–27 times), and other materials (2–20 times) over the period from 2022 to 2050, depending on PV deployment scenarios. Indium and silver demand are notably influenced by PV technology choice. Cumulative indium demand during 2022–2050 could range from 0 kt (for 100 % passivated emitter and rear contact or tunnel oxide passivated contact PV) to 209 kt (for 100 % perovskite-silicon four-terminal tandem PV). Cumulative silver demand during the same period could vary from 144 kt (for 100 % passivated emitter and rear contact PV) to 1121 kt (for 100 % silicon heterojunction PV). One promising approach to mitigate the increasing demand for primary materials is closed-loop recycling. By implementing efficient PV collection and recycling processes, cumulative primary material demand could be reduced by 10 % to 30 % between 2022 and 2050.

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This paper presents dynamic air-based models of a hybrid photovoltaic-thermal (PVT) collector. The models are developed with the aim of estimating the temperature of the collector components and therefore of estimating the annual generation of electrical energy and thermal energy outputs, by using actual climate data of six different cities based on Köppen-Geiger-Photovoltaic (KGPV) climate zones. The results show that the unglazed type collector has the best PV cooling while the dual channel collector has the best air heating among air-based PVT collectors. The results also indicate that the use of additional fluid enhances both electrical and thermal performance. The dynamic models are validated by comparison with results found in the literature. The paper also discusses a novel bi-fluid PVT system combined with a storage tank and an H-infinity based robust controller that can handle uncertainties. The results of the bi-fluid system show that the fraction of energy demand covered by the system is highly dependent on climate conditions and the collector's surface area. It was found that for a small-scale house (standard for four people), the proposed system can cover more than 70% annual domestic hot water demand for cities with high solar irradiance and 32% for a city with low solar irradiance.

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Due to the unique microstructure of hydrogenated nanocrystalline silicon oxide (nc-SiO_x:H), the optoelectronic properties of this material can be tuned over a wide range, which makes it adaptable to different solar cell applications. In this work, the authors review the material properties of nc-SiO_x:H and the versatility of its applications in different types of solar cells. The review starts by introducing the growth principle of doped nc-SiO_x:H layers, the effect of oxygen content on the material properties, and the relationship between optoelectronic properties and its microstructure. A theoretical analysis of charge carrier transport mechanisms in silicon heterojunction (SHJ) solar cells with wide band gap layers is then presented. Afterwards, the authors focus on the recent developments in the implementation of nc-SiO_x:H and hydrogenated amorphous silicon oxide (a-SiO_x:H) films for SHJ, passivating contacts, and perovskite/silicon tandem devices.

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Lead halide perovskites are a promising class of materials for solar cell applications. The perovskite bandgap depends on the material composition and is highly tunable. Opto-electrical device modelling is commonly used to find the optimum perovskite bandgap that maximizes device efficiency or energy yield, either in single junction or multi-junction configuration. The first step in this calculation is the optical modelling of the spectral absorptance. This requires as input the perovskite's complex refractive index N as a function of wavelength λ. The complex refractive index consists of real part n(λ) and imaginary part k(λ). For the most commonly used perovskites, n and k curves are available from spectroscopic ellipsometry measurements, but usually only for a few discrete bandgap energies. For solar cell optimization, these curves are required for a continuous range of bandgap energies. We introduce new methods for generating the n and k curves for an arbitrary bandgap, based on interpolating measured complex refractive index data. First, different dispersion models (Cody-Lorentz, Ullrich-Lorentz and Forouhi-Bloomer) are used to fit the measured data. Then, a linear regression is applied to the fit parameters with respect to the bandgap energy. From the interpolated parameters, the refractive index curve of perovskite with any desired bandgap energy is finally reconstructed. To validate our method, we compare our results with methods from literature and then use it to simulate the absorptance of a single junction perovskite and a perovskite/silicon tandem cell. This shows that our method based on the Forouhi-Bloomer model is more accurate than existing methods in predicting the complex refractive index of perovskite for arbitrary bandgaps.

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Two terminal (2T) perovskite/copper-indium-gallium-selenide (CIGS) tandem solar cells combine high conversion efficiency with lightweight flexible substrates which can decrease manufacturing and installation costs. In order to improve the power conversion efficiency of these tandem solar cells, the use of advanced simulation tools is crucial to estimate the loss mechanisms. In this regard, most of the available simulation works on tandem solar cells are oriented to minimize optical losses and assuming simplifications for the electrical simulations in particular in the top and bottom cell interconnection at the so-called tunnel recombination junction (TRJ) neglecting the inner physics of the complete tandem device. Therefore, the effect of charge exchange mechanism between top and bottom soler cells on the external parameters of a tandem devices is not fully understood yet. In this work, we present an experimentally validated opto-electrical model based on the fundamental semiconductor equations for the study of loss mechanisms of a reference perovskite/CIGS solar cell. Different from other numerical works, because our simulation platform includes the fundamental working mechanisms of the layers comprising the TRJ, we can properly calculate the losses related to it. We firstly present the calibration and validation of our opto-electrical model with respect to three fabricated reference solar cells: top cell only, bottom cell only and tandem device. Then, we use the calibrated model to evaluate main loss mechanisms affecting the baseline tandem device. Finally, we use the model to propose a roadmap for the optimization of monolithic perovskite/CIGS tandem solar cells.

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The fabrication process of interdigitated-back-contacted silicon heterojunction (IBC-SHJ) solar cells has been significantly simplified with the development of the so-called tunnel-IBC architecture. This architecture utilizes a highly conductive (p)-type nanocrystalline silicon (nc-Si:H) layer deposited over the full substrate area comprising pre-patterned (n)-type nc-Si:H fingers. In this context, the (p)-type nc-Si:H layer is referred to as blanket layer. As both electrodes are connected to the same blanket layer, the high lateral conductivity of (p)nc-Si:H layer can potentially lead to relatively low shunt resistance in the device, thus limiting the performance of such solar cells. To overcome such limitation, we introduce a thin (<2 nm) full-area molybdenum oxide (MoO_x) layer as an alternative to the (p)nc-Si:H blanket layer. We demonstrate that the use of such a thin MoO_x minimizes the shunting losses thanks to its low lateral conductivity while preserving the simplified fabrication process. In this process, a novel (n)-type nc-Si:H/MoO_x electron collection contact stack is implemented within the proposed solar cell architecture. We assess its transport mechanisms via electrical simulations showing that electron transport, unlike in the case of tunnel-IBC, occurs in the conduction band fully. Moreover, the proposed contact stack is evaluated in terms of contact resistivity and integrated into a proof-of-concept front/back-contacted (FBC) SHJ solar cells. Contact resistivity as low as 100 mΩcm² is achieved, and fabricated FBC-SHJ solar cells obtain a fill factor above 81.5% and open-circuit voltage above 705 mV. Lastly, the IBC-SHJ solar cells featuring the MoO_x blanket layer are fabricated, exhibiting efficiencies up to 21.14% with high shunt resistances above 150 kΩcm². Further optimizations in terms of layer properties and fabrication process are proposed to improve device performance and realize the efficiency potential of our novel IBC-SHJ solar cell architecture.

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Visible light communication (VLC) is a promising complement considering the rising radio frequency spectrum congestion. However, photodiode receivers degrade rapidly under high ambient light (>200 W/m²). Photovoltaic (PV) cells, designed for outdoor applications, offer an effective alternative. This work studies the fundamental relationship between various LEDs and seven commercial crystalline silicon (c-Si) PV cell architectures to assess simultaneous energy harvesting and communication. The results reveal that increased PV output inversely affects bandwidth. The impact of PV cell architecture on bandwidth is mainly due to bulk doping concentration and metallization design. Higher doping reduces bandwidth at short circuit but increases it at higher operating voltages. At the transmitter end, higher irradiance levels enhance communication, but this effect is minimal at the PV maximum power point (MPP). Additionally, LED color has a negligible impact on PV cell bandwidth. The highest bandwidth is 215 kHz for Al-BSF(5”) under short-circuit, while the lowest is 0.1 kHz for SHJ at MPP. Among the tested c-Si PV architectures, Al-BSF cells exhibit the best communication stability – from 100 kHz to 10 kHz, while SHJ shows the worst – from 100 kHz to 0.1 kHz. TOPCon demonstrates the optimal balance between energy harvesting and communication for Pareto optimality.

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This work presents a practical approach to designing an optical filter for thermal management for photovoltaic modules. The approach emphasizes the practicality of manufacturing over optical performance. Simulation work demonstrates that, for an interdigitated back contact solar cell architecture, complete rejection of infrared radiation offers limited thermal benefits requiring highly complex optical filter designs. An alternative approach consists of reducing thermalization losses by providing reflectance at lower wavelength values. An optical filter design that fulfills this requirement is possible using simple structures based on two materials and taking advantage of the harmonics present in quarter wavelength optical thickness designs. The filter is later optimized for angular performance via second-order algorithms, resulting in a device consisting of only 15 thin-film layers. Performance simulations on two locations, Delft (the Netherlands) and Singapore, estimate a temperature reduction of 2.20°C and 2.45°C, respectively. In a single year, the optical loss produced by the filter is not compensated via temperature reduction. However, improvements in the annual degradation rate show that in Singapore, the overall effect of the filter on the lifetime DC energy yield is positive.

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Nowadays, an increasing share of photovoltaic (PV) systems makes use of module- or submodule-level power electronics (PE). Furthermore, PE is used in stand-alone devices powered by PV-storage solutions. One way to facilitate further implementation of PE in PV applications is to integrate PE components into crystalline silicon PV cells. Herein, the COSMOS device is introduced, denoting COmbined Solar cell and metal-oxide-semiconductor field-effect transistor (MOSFET). Specifically, the combined manufacturing of lateral power MOSFETs and interdigitated back contact solar cells with tunnel-oxide passivated contacts (TOPCon) on a single wafer is reported. Many steps of the proposed process flow are used for the fabrication of both devices, enabling cost-effective integration of the MOSFET. Both n-type solar cells with integrated p-channel MOSFETs (PMOS) and p-type solar cells with integrated n-channel MOSFETs (NMOS) are successfully manufactured. NMOS devices perform better in achieving low on-resistance, while PMOS devices exhibit lower leakage currents. Furthermore, the study reveals integration challenges where off-state leakage currents of the MOSFET can increase due to illumination and specific configurations of monolithic interconnections between the MOSFET and the solar cell. Nevertheless, for both n-type and p-type solar cells, efficiencies exceeding 20% are achieved, highlighting the potential of the proposed process for COSMOS devices.

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This work is a long-term, interannual, and experimental study conducted in multiple locations. It studies the effects of phase change materials (PCMs) on photovoltaic modules’ performance by reducing their operational temperature. Two PV modules were manufactured so that PCM slabs could be mechanically attached to their backside, ensuring contact with the related photovoltaic active area. Experiments were conducted in Delft, Netherlands, from 2019 until 2021 and in Catania, Italy, during the winter and start of spring of 2023. The experiment also considered two installation layouts: building integrated (Delft) and standard rack-mounted (Catania). The measurements showed that the PCM provides significant cooling under both locations, with a temperature reduction of up to 15 °C. In Delft, thermal control could be obtained for most of the sunny hours of the day, even during the summer months. In Catania, the module with PCM presented, on occasion, higher temperatures than its standard counterpart, primarily due to winter-time environmental conditions. However, the PCM provided sufficient thermal control on all conditions, ensuring increased energy yield. This increase ranged from 2.1 to 2.5 % in Delft and 1.3–1.6 % in Italy.

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Transition metal oxide (TMO) thin films exhibit large bandgap and hold great potential for enhancing the performance of silicon heterojunction (SHJ) solar cells by increasing the short-circuit current density significantly. On the other hand, achieving precise control over the electrical properties of TMO layers is crucial for optimizing their function as efficient carrier-selective layer. This study demonstrates a general and feasible approach for manipulating the quality of several TMO films, aimed at enhancing their applicability in silicon heterojunction (SHJ) solar cells. The core of our method involves precise engineering of the interface between the TMO film and the underlying hydrogenated intrinsic amorphous silicon passivation layer by managing the reaction of the TMO on the surface. X-ray photoelectron spectroscopy spectra demonstrate that our methods can modify the oxygen content in TMO films, thereby adjusting their electronic properties. By applying this method, we have successfully fabricated WO_x-based SHJ solar cells with 23.30 % conversion efficiency and V₂O_x-based SHJ solar cells with 22.04 % conversion efficiency, while keeping n-type silicon-based electron-transport layer at the rear side. This research paves the way for extending such interface engineering methods to other TMO materials used as hole-transport layers in SHJ solar cells.

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Clouds moving in front or away from the sun are the leading cause of irradiance variability. These variations have a repercussion on the electricity production of photovoltaic systems. Predicting such changes is essential for proper control of these systems and for maintaining grid stability. Images from the sky have proven to help with short-term solar irradiance forecasting, especially when combined with artificial intelligence. Nevertheless, these models tend to smooth the irradiance fluctuations. We propose a forecasting model to predict the clear-sky index in a forecast horizon of 20 min with a 1-minute resolution. Our model, based on a classifier to determine the sky conditions and, on an optical flow, applies an artificial intelligence model explicitly trained on each class of sky conditions. This strategy has an equivalent performance to an unclassified model and a forecast skill between 5 and 20% with respect to the smart persistence model for most classes of sky conditions while requiring considerably less training data. Although our model reduces the overall predicting error, it still has difficulties predicting irradiance changes and mainly overcast days. Our classifying strategy can be applied to other models targeting different objectives to predict sudden changes in either irradiance or power related to photovoltaic systems.

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Passivating contacts are crucial for realizing high-performance crystalline silicon solar cells. Herein, contact formation by plasma-enhanced chemical vapor deposition (PECVD) followed by an annealing step is focused on. Poly-SiO_x passivating contacts by combining plasma-assisted N₂O-based oxidation of silicon (PANO-SiO_x) with a thin film of phosphorus (n⁺) or boron (p⁺)-doped hydrogenated amorphous silicon oxide (a-SiO_x:H) are manufactured. Postannealing is conducted for transitioning a-SiO_x:H into poly-SiO_x. The aim is to achieve a contact with low absorption and high-quality passivation. It is demonstrated that by tuning the plasma oxidation process time and power, the PANO-SiO_x thickness and its passivation quality can be controlled. A higher SiO₂ content is observed in PANO-SiO_x than in the nitric acid oxidation of silicon (NAOS-SiO_x) counterpart. PANO-SiO_x acts as a stronger diffusion barrier for both boron and phosphorus atoms compared to NAOS-SiO_x, affecting the dopant distribution during annealing. Implied open-circuit voltages up to 751 and 710 mV for n⁺ and p⁺ flat symmetric samples, respectively, are demonstrated. With respect to standard thermally grown SiO₂ tunneling oxide combined with (in/ex)situ-doped low-pressure chemical vapor deposition poly-Si, this study presents a simple alternative for manufacturing passivating contact fully based on PECVD processes.

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Single junction crystalline silicon (c-Si) solar cells are reaching their practical efficiency limit whereas perovskite/c-Si tandem solar cells have achieved efficiencies above the theoretical limit of single junction c-Si solar cells. Next to low-thermal budget silicon heterojunction architecture, high-thermal budget carrier-selective passivating contacts (CSPCs) based on polycrystalline-SiO_x (poly-SiO_x) also constitute a promising architecture for high efficiency perovskite/c-Si tandem solar cells. In this work, we present the development of c-Si bottom cells based on high temperature poly-SiO_x CSPCs and demonstrate novel high efficiency four-terminal (4T) and two-terminal (2T) perovskite/c-Si tandem solar cells. First, we tuned the ultra-thin, thermally grown SiO_x. Then we optimized the passivation properties of p-type and n-type doped poly-SiO_x CSPCs. Here, we have optimized the p-type doped poly-SiO_x CSPC on textured interfaces via a two-step annealing process. Finally, we integrated such bottom solar cells in both 4T and 2T tandems, achieving 28.1% and 23.2% conversion efficiency, respectively.

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Due to the inherent uncertainty in photovoltaic (PV) energy generation, an accurate power forecasting is essential to ensure a reliable operation of PV systems and a safe electric grid. Machine learning (ML) techniques have gained popularity on the development of this task due to its increased accuracy. Most literature, however, focuses only on less than 5 PV systems during training process, which does not ensure generalization to unseen systems. When in presence of a large feet, regional forecasts are the norm. Nevertheless, none of these approaches are usable when it comes to monitoring residential PV systems. In this work, we propose a single ML model that is able to predict the individual power of a large fleet of 1102 PV systems. XGBoost algorithm was selected as the most suitable algorithm for the task of PV yield nowcasting due to its performance and ease of use. This algorithm obtains Mean Absolute Error (MAE) of 0.877 kWh (considering an average system size of 4.44 kWp) and Mean Absolute Percentage Error (MAPE) of 23% for hourly data aggregated to daily values. XGBoost predictions for individual PV systems are on average two times better than currently used commercial software. We discuss the lack of a suitable loss function that can combine absolute and relative errors for residential PV yield forecasting. We also point out the lack of an adequate metric to compute the error made on the predictions and provide hints on developing a suitable one.

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The preferential orientation of the perovskite (PVK) is typically accomplished by manipulation of the mixed cation/halide composition of the solution used for wet processing. However, for PVKs grown by thermal evaporation, this has been rarely addressed. It is unclear how variation in crystal orientation affects the optoelectronic properties of thermally evaporated films, including the charge carrier mobility, lifetime, and trap densities. In this study, we use different intermediate annealing temperatures Tinter between two sequential evaporation cycles to control the Cs0.15FA0.85PbI2.85Br0.15 orientation of the final PVK layer. XRD and 2D-XRD measurements reveal that when using no intermediate annealing primarily the (110) orientation is obtained, while when using Tinter = 100 °C a nearly isotropic orientation is found. Most interestingly for Tinter > 130 °C a highly oriented PVK (100) is formed. We found that although bulk electronic properties like photoconductivity are independent of the preferential orientation, surface related properties differ substantially. The highly oriented PVK (100) exhibits improved photoluminescence in terms of yield and lifetime. In addition, high spatial resolution mappings of the contact potential difference (CPD) as measured by KPFM for the highly oriented PVK show a more homogeneous surface potential distribution than those of the nonoriented PVK. These observations suggest that a highly oriented growth of thermally evaporated PVK is preferred to improve the charge extraction at the device level.@en