Due to the immature manufacturing process, Resistive Random Access Memories (RRAMs) are prone to exhibit new failure mechanisms and faults, which should be efficiently detected for high-volume production. Those unique faults are hard to detect but require specific Design-for-Test (DfT) circuit design. This paper proposes a DfT based on a parallel-reference write circuit that can detect all RRAM array faults during diagnosis, production testing, and its application in the field.@en

The Advanced Encryption Standard (AES) is widely recognized as a robust cryptographic algorithm utilized to protect data integrity and confidentiality. When it comes to lightweight implementations of the algorithm, the literature mainly emphasizes area and power optimization, often overlooking considerations related to performance and security. This paper evaluates two of our previously proposed lightweight AES implementations using both profiled and non-profiled attacks. One is an unprotected implementation, and the other one is a protected version using Domain-Oriented Masking (DOM). The findings of this study indicate that the inclusion of DOM in the design enhances its resistance to attacks at the cost of doubling the area.@en

Applications of Binary Neural Networks (BNNs) are promising for embedded systems with hard constraints on energy and computing power. Contrary to conventional neural networks using floating-point datatypes, BNNs use binarized weights and activations to reduce memory and computation requirements. Memristors, emerging non-volatile memory devices, show great potential as a target implementation platform for BNNs by integrating storage and compute units. However, the efficiency of this hardware highly depends on how the network is mapped and executed on these devices. In this paper, we propose an efficient implementation of XNOR-based BNN to maximize parallelization. In this implementation, costly analog-to-digital converters are replaced with sense amplifiers with custom reference(s) to generate activation values. Besides, a novel mapping is introduced to minimize the overhead of data communication between convolution layers mapped to different memristor crossbars. This comes with extensive analytical and simulation-based analysis to evaluate the implication of different design choices considering the accuracy of the network. The results show that our approach achieves up to $5\times$ energy-saving and $100\times$ improvement in latency compared to baselines.@en

Resistive Random-Access Memories (ReRAMs) represent a promising candidate to complement and/or replace CMOS-based memories used in several emerging applications. Despite all the advantages of using these novel memories, mainly due to the memristive device's CMOS manufacturing process compatibility, zero standby power consumption, as well as, high scalability and density, the use of them in real applications depends on being able to guarantee their quality after manufacturing. As observed in CMOS-based memories, ReRAMs are also susceptible to manufacturing deviations, defects, and process variations, that can cause faulty behaviors different from the ones observed in CMOS technology, increasing not only the manufacturing test complexity but also the time required to perform the test. In this context, this paper proposes to study the use of temperature to facilitate fault propagation in ReRAMs, reducing the required test time. A case study composed of a 3x3 word-based ReRAM with peripheral circuitry implemented based on a 130 nm Predictive Technology Model (PTM) library was adopted. During the proposed study, a total of 17 defects were injected in different positions of the ReRAM cell, and their respective faulty behavior was classified into traditional and unique faults, considering three temperatures (25, 100, and -40°C). The obtained results show that the temperature can, depending on the position of the defect, facilitate fault propagation, which reduces the time required for performing manufacturing testing.

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Diabetic retinopathy (DR) is a leading cause of permanent vision loss worldwide. It refers to irreversible retinal damage caused due to elevated glucose levels and blood pressure. Regular screening for DR can facilitate its early detection and timely treatment. Neural network-based DR classifiers can be leveraged to achieve such screening in a convenient and automated manner. However, these classifiers suffer from reliability issue where they exhibit strong performance during development but degraded performance after deployment. Moreover, they do not provide supplementary information about the prediction outcome, which severely limits their widespread adoption. Furthermore, energy-efficient deployment of these classifiers on edge devices remains unaddressed, which is crucial to enhance their global accessibility. In this paper, we present a reliable and energy-efficient hardware for DR detection, suitable for deployment on edge devices. We first develop a DR classification model using custom training data that incorporates diverse image quality and image sources along with improved class balance. This enables our model to effectively handle both on-field variations in retinal images and minority DR classes, enhancing its post-deployment reliability. We then propose a pseudo-binary classification scheme to further improve the model performance and provide supplementary information about the model prediction. Additionally, we present an energy-efficient hardware design for our model using memristor-based computation-in-memory, to facilitate its deployment on edge devices. Our proposed approach achieves reliable DR classification with three orders of magnitude reduction in energy consumption over state-of-the-art hardware platforms.

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Effectively feeding a burgeoning world population is one of the main goals of sustainable agricultural practices. Digital technology, such as edge artificial intelligence (AI), has the potential to introduce substantial benefits to agriculture by enhancing farming practices that can improve agricultural production efficiency, yield, quality and safety. However, the adoption of edge AI faces several challenges, including the need for innovative and efficient edge AI solutions and greater investment in infrastructure and training, all compounded by various environmental, social and economic constraints. Here we provide a roadmap for leveraging edge AI at the intersection of food production and sustainability.

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Resistive Random Access Memories (RRAMs) are now undergoing commercialization, with substantial investment from many semiconductor companies. However, due to the immature manufacturing process, RRAMs are prone to exhibit unique defects, which should be efficiently identified for high-volume production. Hence, obtaining diagnostic solutions for RRAMs is necessary to facilitate yield learning, and improve RRAM quality. Recently, the Device-Aware Test (DAT) approach has been proposed as an effective method to detect unique defects in RRAMs. However, the DAT focuses more on developing defect models to aid production testing but does not focus on the distinctive features of defects to diagnose different defects. This paper proposes a Device-Aware Diagnosis method; it is based on the DAT approach, which is extended for diagnosis. The method aims to efficiently distinguish unique defects and conventional defects based on their features. To achieve this, we first define distinctive features of each defect based on physical analysis and characterizations. Then, we develop efficient diagnosis algorithms to extract electrical features and fault signatures for them. The simulation results show the effectiveness of the developed method to reliably diagnose all targeted defects.

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Memristor technology has shown great promise for energy-efficient computing [1] , though it is still facing many challenges [1 , 2]. For instance, the required additional costly electroforming to establish conductive pathways is seen as a significant drawback as it contributes to power and area overheads, and limited device endurance. In this work, we propose a novel forming-free HfO₂ -based ReRAM device with low operating voltages , multi-level capability , and less sensitivity to device-to-device (D2D) and cycle-to-cycle (C2C) variations. The device is fabricated using CMOS-compatible processes, excluding the undesirable complex steps mandatory to manufacture the state-of-the-art forming-free devices [3, 4, 5]. This is accomplished by utilizing the desirable formation energy of Pd-O bonds [6, 7], which creates conducting paths at room temperature while maintaining the analog switching ability of the devices. The proposed ReRAM device holds a great value for dense memories and energy-efficient compute architectures.

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State-of-the-Art (SotA) hardware implementations of Deep Neural Networks (DNNs) incur high latencies and costs. Binary Neural Networks (BNNs) are potential alternative solutions to realize faster implementations without losing accuracy. In this paper, we first present a new data mapping, called TacitMap, suited for BNNs implemented based on a Computation-In-Memory (CIM) architecture. TacitMap maximizes the use of available parallelism, while CIM architecture eliminates the data movement overhead. We then propose a hardware accelerator based on optical phase change memory (oPCM) called EinsteinBarrier. Ein-steinBarrier incorporates TacitMap and adds an extra dimension for parallelism through wavelength division multiplexing, leading to extra latency reduction. The simulation results show that, compared to the SotA CIM baseline, TacitMap and EinsteinBarrier significantly improve execution time by up to ∼ 154× and ∼ 3113×, respectively, while also maintaining the energy consumption within 60% of that in the CIM baseline.

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Spiking Neural Networks (SNNs) are Artificial Neural Networks which promise to mimic the biological brain processing with unsupervised online learning capability for various cognitive tasks. However, SNN hardware implementation with online learning support is not trivial and might prove highly inefficient. This paper proposes an energy-efficient hardware implementation for SNN synapses. The implementation is based on parallel-connected Magnetic Tunnel Junction (MTJ) devices and exploits their inherent stochasticity. In addition, it uses a dedicated unsupervised learning rule based on optimized Spike-Timing-Dependent Plasticity (STDP). To facilitate the design of the SNN, its training and evaluation, an open-source Python-based platform is developed; it takes as input the SNN parameters and discrete circuit components, and it automatically generates the associated full netlist in SPICE; moreover, it extracts the simulation results and makes them available in python for evaluation and manipulation. Unlike conventional neuromorphic hardware that relies on simple weight mapping post-off-line training, our approach emphasizes continuous, unsupervised learning, ensuring an energy efficiency of 11.2nW per synaptic update during training and as low as 109fJ/spike during inference.@en

While Resistive RRAM (RRAM) offers attractive features for artificial neural networks (NN) such as low power operation and high-density, its conductance variation can pose significant challenges when the storage of synaptic weights is concerned. This paper reports an experimental evaluation of the conductance variations of manufactured RRAMs at the memory array level. Working at the memory array level allows to catch cycle-to-cycle (C2C) as well as device-to-device (D2D) variability and, hence, to propose a realistic evaluation of the conductance variation. Variability is evaluated with respect to the RRAM low resistance state (LRS) and high resistance state (HRS) conductance ratio. This ratio is selected as the parameter of interest as it guarantees the proper operation of the RRAM: the larger the ratio, the more reliable and robust the RRAM cell is in storing and retrieving data. The measurement results show that the conductance ratio is heavily affected by variability. Large spatial and temporal variations are reported, making challenging RRAM-based analog weight storage.

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Guaranteeing high-quality test solutions for Spin-Transfer Torque Magnetic RAM (STT-MRAM) is a must to speed up its high-volume production. A high test quality requires maximizing the fault coverage. Detecting permanent faults is relatively simple compared to intermittent faults; the latter are faults (caused by non-environmental conditions) that appear and disappear as a function of time, and are therefore hard to detect. Testing for such faults in STT-MRAMs is even worse considering the Magnetic Tunneling Junction inherent property ‘intrinsic switching stochasticity’, which results in inevitable random write errors. This paper presents a novel Design-for-Testability (DFT) scheme for detecting intermittent faults in STT-MRAMs; it is based on monitoring the write current. The strength of the write current is inversely correlated to the write error rate; when the write current is smaller than the specification, the device is considered faulty. A reduction in the write current can be caused by any defect in the write path of the memory (e.g., interconnects and contacts). Simulation results based on industrial design show that applying DFT yields a superior coverage of intermittent faults compared to functional test methods, such as march tests.@en

Memristive devices have become promising candidates to complement the CMOS technology, due to their CMOS manufacturing process compatibility, zero standby power consumption, high scalability, as well as their capability to implement high-density memories and new computing paradigms. Despite these advantages, memristive devices are susceptible to manufacturing defects that may cause faulty behaviors not observed in CMOS technology, significantly increasing the challenge of testing these novel devices after manufacturing. This work proposes an optimized Design-for-Testability (DfT) strategy based on the introduction of a DfT circuitry that measures the current consumption of Resistive Random Access Memory (ReRAM) cells to detect not only traditional but also unique faults. The new DfT circuitry was validated using a case study composed of a 3x3 word-based ReRAM with peripheral circuitry implemented based on a 130 nm Predictive Technology Model (PTM) library. The obtained results demonstrate the fault detection capability of the proposed strategy with respect to traditional and unique faults. In addition, this paper evaluates the impact related to the DfT circuitry’s introduced overheads as well as the impact of process variation on the resolution of the proposed DfT circuitry.

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Computation-in-memory (CIM) using memristors can facilitate data processing within the memory itself, leading to superior energy efficiency than conventional von-Neumann architecture. This makes CIM well-suited for data-intensive applications like neural networks. However, a large number of read operations can induce an undesired resistance change in the memristor, known as read-disturb. As memristor resistances represent the neural network weights in CIM hardware, read-disturb causes an unintended change in the network’s weights that leads to poor accuracy. In this paper, we propose a methodology for read-disturb detection and mitigation in CIM-based neural networks. We first analyze the key insights regarding the read-disturb phenomenon. We then introduce a mechanism to dynamically detect the occurrence of read-disturb in CIM-based neural networks. In response to such detections, we develop a method that adapts the sensing conditions of CIM hardware to provide error-free operation even in the presence of read-disturb. Simulation results show that our proposed methodology achieves up to 2× accuracy and up to 2× correct operations per unit energy compared to conventional CIM architectures.@en

Current Spin Wave (SW) state-of-the-art computing relies on wave interference for achieving low power circuits. Despite recent progress, many hurdles, e.g., gate cascading, fan-out achievement, still exist. In a previous work, we introduced a novel SW phase shift based computation paradigm and demonstrated that an n-input Threshold Logic Gate (TLG) can be implemented with n + 1 phase shifters operating on the same SW. In this paper we further develop this concept by introducing a phase shift amount reading method by means of parametric amplification. We make use of 3-input Majority Gate (MAJ3) as discussion vehicle and introduce a novel majority function evaluation approach which postpone the threshold related calculations to the gate output readout stage. Subsequently, we verify this principle by means of micromagnetic simulations and discus the results. Finally, we utilize the proposed MAJ3 gate to implement a collection of representative logic circuits from the EPFL Combinational Benchmarking Suite and evaluate and compare their area, energy consumption, and Energy Area Product (EAP) with the ones of 7 nm CMOS technology node based counterpart imple-mentations. Our estimations indicate that EAP_CMOS/EAP_SW average value is 5.25 and 2.2 for a SW transducer feature size of 20 nm and 30 nm, respectively.

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Neuromorphic processors promise low-latency and energy-efficient processing by adopting novel brain-inspired design methodologies. Yet, current neuromorphic solutions still struggle to rival conventional deep learning accelerators' performance and area efficiency in practical applications. Event-driven data-flow processing and near/in-memory computing are the two dominant design trends of neuromorphic processors. However, there remain challenges in reducing the overhead of event-driven processing and increasing the mapping efficiency of near/in-memory computing, which directly impacts the performance and area efficiency. In this work, we discuss these challenges and present our exploration of optimizing event-based neural network inference on SENECA, a scalable and flexible neuromorphic architecture. To address the overhead of event-driven processing, we perform comprehensive design space exploration and propose spike-grouping to reduce the total energy and latency. Furthermore, we introduce the event-driven depth-first convolution to increase area efficiency and latency in convolutional neural networks (CNNs) on the neuromorphic processor. We benchmarked our optimized solution on keyword spotting, sensor fusion, digit recognition and high resolution object detection tasks. Compared with other state-of-the-art large-scale neuromorphic processors, our proposed optimizations result in a 6× to 300× improvement in energy efficiency, a 3× to 15× improvement in latency, and a 3× to 100× improvement in area efficiency. Our optimizations for event-based neural networks can be potentially generalized to a wide range of event-based neuromorphic processors.

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The development of Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) mass production requires high-quality test solutions. Accurate and appropriate fault modeling is crucial for the realization of such solutions. This paper targets fault modeling and test generation for all interconnect and contact defects in STT-MRAMs and shows that using the defect injection and circuit simulation for fault modeling without incorporating the impact of magnetic coupling will result in an incomplete set of fault models; hence, not obtaining accurate fault models. Magnetic coupling introduced by the stray field is an inherent property of STT-MRAMs and may foster the occurrence of additional memory faults. Not considering the magnetic coupling clearly will give rise to test escapes. The paper introduces a compact model for STT-MRAM that incorporates the intra- and inter-cell stray field, uses this model to derive the full set of fault models for interconnect and contact defects, and finally proposes an efficient test solution.

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Hardware security is currently a very influential domain, where each year countless works are published concerning attacks against hardware and countermeasures. A significant number of them use machine learning, which is proven to be very effective in other domains. This survey, as one of the early attempts, presents the usage of machine learning in hardware security in a full and organized manner. Our contributions include classification and introduction to the relevant fields of machine learning, a comprehensive and critical overview of machine learning usage in hardware security, and an investigation of the hardware attacks against machine learning (neural network) implementations.@en

The vast potential of memristor-based computation-in-memory (CIM) engines has mainly triggered the mapping of best-suited applications. Nevertheless, with additional support, existing applications can also benefit from CIM. In particular, this paper proposes an energy and area-efficient CIM-based methodology to perform arithmetic signed matrix multiplications. Our approach combines a) the mapping of the signed operands on the 1T1R crossbar, and b) the augmentation of the periphery with customized circuits to support the execution of shift and accumulate needed for the arithmetic operations. The operand mapping is performed without the need for sign extension; hence, reducing the required memory size. To demonstrate the superiority of our scheme as compared with the state-of-the-art, simulations are performed for different case studies including a neural network and two kernels which are taken from the Polybench/C benchmark suite. The results show that our approach achieves up to 8× energy-saving and 3× area-saving compared with other CIM-based prior works.

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The development of Spin-transfer torque magnetic RAM (STT-MRAM) mass production requires high-quality dedicated test solutions, for which understanding and modeling of manufacturing defects of the magnetic tunnel junction (MTJ) is crucial. This paper introduces and characterizes a new defect called Back-Hopping (BH); it also provides its fault models and test solutions. The BH defect causes MTJ state to oscillate during write operations, leading to write failures. The characterization of the defect is carried out based on manufactured MTJ devices. Due to the observed non-linear characteristics, the BH defect cannot be modelled with a linear resistance. Hence, device-aware defect modeling is applied by considering the intrinsic physical mechanisms; the model is then calibrated based on measurement data. Thereafter, the fault modeling and analysis is performed based on circuit-level simulations; new fault primitives/models are derived. These accurately describe the way the STT-MRAM behaves in the presence of BH defect. Finally, dedicated march test and a Design-for-Test solutions are proposed.

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