We studied the nature of excitons in the transition metal dichalcogenide alloy Mo0.6W0.4S2 compared to pure MoS2 and WS2 grown by atomic layer deposition (ALD). For this, optical absorption/transmission spectroscopy and time-dependent density functional theory (TDDFT) were used. The effects of temperature on A and B exciton peak energies and line widths in optical transmission spectra were compared between the alloy and pure MoS2 and WS2. On increasing the temperature from 25 to 293 K, the energy of the A and B exciton peaks decreases, while their line width increases due to exciton-phonon interactions. The exciton-phonon interactions in the alloy are closer to those for MoS2 than those for WS2. This suggests that exciton wave functions in the alloy have a larger amplitude on Mo atoms than that on W atoms. The experimental absorption spectra could be reproduced by TDDFT calculations. Interestingly, for the alloy, the Mo and W atoms had to be distributed over all layers. Conversely, we could not reproduce the experimental alloy spectrum by calculations on a structure with alternating layers, in which every other layer contains only Mo atoms and the layers in between also contain W atoms. For the latter atomic arrangement, the TDDFT calculations yielded an additional optical absorption peak that could be due to excitons with some charge transfer character. From these results, we conclude that ALD yields an alloy in which Mo and W atoms are distributed uniformly among all layers.

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In conventional solar cell semiconductor materials (predominantlySi)photons with energy higher than the band gap initially generate hot electrons and holes, which subsequently cool down to the band edge by phonon emission. Due to the latter process,the energy of the charge carriers in excess of the band gap is lost as heat and does not contribute to the conversion of solar to electrical power. If the excess energy is more than the band gap itcan in principle be utilized through a process known as carrier multiplication (CM) in which a single absorbed photon generates two (or more) pairs of electrons and holes. Thus, through CM the photon energy abovetwice the band gap enhancesthe photocurrentofa solar cell. In this review, we discuss recent progress in CM research in terms of fundamental understanding, emergenceof new materials for efficient CM, and CM based solar cell applications. Based on our current understanding, the CM threshold can get close to the minimal value of twice the band gap in materials where a photon induces an asymmetric electronic transition from a deeper valence band or to a higher conduction band. In addition,the material must have a low exciton binding energy and high charge carrier mobility, so that photoexcitation leads directly to the formation of free charges that can readily be extracted at external electrodes of a photovoltaic device. Percolative networks of coupled PbSe quantum dots, Sn/Pb based halide perovskites,and transition metal dichalcogenides such as MoTe2fulfill these requirements to a large extent. These findings pointtowards promising prospects for further development of new materials for highly efficient photovoltaics. @en

We studied the dynamics of transfer of photoexcited electronic states in a bilayer of the two-dimensional transition metal dichalcogenide ReS2 and tetracene, with the aim to produce triplets in the latter. This material combination was used as the band gap of ReS2 (1.5 eV) is slightly larger than the triplet energy of tetracene (1.25 eV). Using time-resolved optical absorption spectroscopy, transfer of photoexcited states from ReS2 to triplet states in tetracene was found to occur within 5 ps with an efficiency near 38%. This result opens up new possibilities for heterostructure design of two-dimensional materials with suitable organics to produce long-lived triplets. Triplets are of interest as sensitizers in a wide variety of applications including optoelectronics, photovoltaics, photocatalysis, and photon upconversion.

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Few-layered transition-metal dichalcogenides (TMDs) are increasingly popular materials for optoelectronics and catalysis. Among the various types of TMDs available today, rhenium chalcogenides (ReX2) stand out due to their remarkable electronic structure, such as the occurrence of anisotropic excitons and potential direct band gap behavior throughout multilayered stacks. In this paper, we have analyzed the nature and dynamics of charge carriers in highly crystalline liquid-phase exfoliated ReS2, using a unique combination of optical pump-THz probe and broad-band transient absorption spectroscopy. Two distinct time regimes are identified, both of which are dominated by unbound charge carriers despite the high exciton binding energy. In the first time regime, the unbound charge carriers cause an increase and a broadening of the exciton absorption band. In the second time regime, a peculiar narrowing of the excitonic absorption profile is observed, which we assign to the presence of built-in fields and/or charged defects. Our results pave the way to analyze spectrally complex transient absorption measurements on layered TMD materials and indicate the potential for ReS2 to produce mobile free charge carriers, a feat relevant for photovoltaic applications.

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Singlet fission in tetracene generates two triplet excitons per absorbed photon. If these triplet excitons can be effectively transferred into silicon (Si), then additional photocurrent can be generated from photons above the bandgap of Si. This could alleviate the thermalization loss and increase the efficiency of conventional Si solar cells. Here, we show that a change in the polymorphism of tetracene deposited on Si due to air exposure facilitates triplet transfer from tetracene into Si. Magnetic field-dependent photocurrent measurements confirm that triplet excitons contribute to the photocurrent. The decay of tetracene delayed photoluminescence was used to determine a transfer efficiency of ∼36% into Si. Our study suggests that control over the morphology of tetracene during the deposition will be of great importance to boost the triplet transfer yield further.

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Carrier multiplication (CM) generates multiple electron-hole pairs in a semiconductor from a single absorbed photon with energy exceeding twice the band gap. Thus, CM provides a promising way to circumvent the Shockley-Queisser limit of solar cells. The ideal material for CM should have significant overlap with the solar spectrum and should be able to fully utilize the excess energy above the band gap for additional charge carrier generation. We report efficient CM in mixed Sn/Pb halide perovskites (band gap of 1.28 eV) with onset just above twice the band gap. The CM rate outcompetes the carrier cooling process leading to efficient CM with a quantum yield of 2 for photoexcitation at 2.8 times the band gap. Such efficient CM characteristics add to the many advantageous properties of mixed Sn/Pb metal halide perovskites for photovoltaic applications.

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