Nonequal current generation in the cells of a photovoltaic module, e.g., due to partial shading, leads to operation in reverse bias. This quickly causes a significant efficiency loss in perovskite solar cells. We report a more quantitative investigation of the reverse bias degradation. Various small reverse biases (negative voltages) were applied for different durations. After normalizing the applied voltages with the breakdown voltages, we found similar dependences of the reverse bias current and the degradation rate. We draw conclusions regarding possible degradation mechanisms and propose a way to increase the comparability of degradation rates for comparing different perovskite solar cells.

Partial shading of PV modules can lead to degradation of the shaded cells. The degradation originates from a reverse bias voltage over the shaded cells. In order to mitigate reverse bias damage in Cu(In, Ga)Se2 (CIGS) modules, a good understanding of the fundamental mechanisms governing the reverse characteristic is required. In this study, a model is introduced that describes this behavior for CIGS cells. In this model, the low and non-Ohmic leakage current is accounted for by the space charge limited current component. A sharp increase in current that is typically observed in the CIGS reverse characteristics can be described by Fowler-Nordheim tunneling. This model has been validated against measurements performed at different temperatures and illumination intensities, and is able to describe the dependencies of the reverse bias behavior on both temperature and illumination.

Partial shading of CIGS modules can lead to permanent damage of the module in the shaded area. This is caused by harmful reverse bias voltages in the shaded area which lead to reverse bias induced defects, also known as wormlike defects. A lot is already known about the origin and propagation of wormlike defects. However, the fundamental question; why is CIGS so sensitive to reverse bias damage? has not yet been answered. In this study we show that CIGS semiconductor material in the presence of an electric field will spontaneously decompose.

Partial shading of monolithically interconnected Cu(In,Ga)Se₂ (CIGSe) modules can lead to the formation of reverse bias induced defects. These localized defects permanently reduce the output of the PV module. The formation and propagation mechanisms of these defects is studied. Understanding these mechanisms can help to prevent or mitigate damage due to partial shading of CIGSe PV modules. A propagation mechanism is proposed based on both compositional changes found at the edges of the reverse bias induced defects and differences in observed propagation patterns caused by the lateral voltage drop over the TCO layer.

When a PV module is partially shaded, the shaded solar cells operate in a reverse bias condition. For Cu(In,Ga)Se2 cells this condition can cause defects that irreversibly reduce the output of these cells and the full module. In order to design robust shade-tolerant CIGS modules details need to be known of the conditions at which these defects will be formed. In this study a large number of cells were exposed to different reverse bias conditions. By using simple statistics the probability of the occurrence of defects as a result of reverse bias at any given voltage has been determined. Based on our experiments we have found that the absorber thickness is one of the main parameters that affects the shade-tolerance: the thicker the absorber, the more shade tolerant the CIGS module will be.

Partial shading of Cu(In,Ga)(Se,S)2 (CIGS) photovoltaic (PV) modules is getting more attention, as is witnessed by the increase in publications on this topic in recent years. This review will give an overview of shading tests executed on CIGS modules and focuses on the more fundamental aspects that are often studied on cells. Generally, CIGS modules display very attractive performance under predictable row-to-row shading. However, potential damage could occur under nonoptimal shading orientations: module output after shading tests could reduce due to the formation of local shunts, often called wormlike defects. The influence of many factors on the formation of these defects, including the internal currents and voltages and the shape and intensity of the shade, will be discussed. This review allows an increased insight in the degradation mechanisms caused by partial shading, which would ultimately lead to the introduction of more shade-tolerant CIGS PV products in the future.

Partial shading of Cu(In,Ga)Se₂ modules can lead to the formation of reverse bias induced wormlike defects. These wormlike defects act as local shunts and permanently decrease module output. A good understanding of the formation and propagation mechanisms of these defects is needed in order to mitigate the negative effects, or to prevent these defects from forming. In this article, wormlike defects were formed on small nonencapsulated cells by exposing them to reverse bias conditions. Scanning electron microscopy-energy-dispersive X-ray spectroscopy measurements showed a rearrangement of elements: Indium, gallium, and copper were replaced by cadmium, whereas selenium was replaced by sulfur in the area around the defect. Moreover, additional electronic-defect levels were found in that area with spectrally resolved photoluminescence spectroscopy. Based on the material changes in the area close to the wormlike defects, a propagation mechanism is proposed. The model assumes a chemical reaction as the driving force for propagation instead of melting because of ohmic heating.

The perovskite solar cell is considered a promising candidate as the top cell for high-efficiency tandem devices with crystalline silicon (c-Si) bottom cells, contributing to the cost reduction of photovoltaic energy. In this contribution, a simulation method, involving optical and electrical modelling, is established to calculate the performance of 4-terminal (4T) perovskite/c-Si tandem devices on a mini-module level. Optical and electrical characterization of perovskite and c-Si solar cells are carried out to verify the simulation parameters. With our method, the influence of transparent conductive oxide (TCO) layer thickness of perovskite top cells on the performance of tandem mini-modules is investigated in case of both tin-doped indium oxide (ITO) and hydrogen-doped indium oxide (IO:H). The investigation shows that optimization of TCO layer thickness and replacement of conventional ITO with highly transparent IO:H can lead to an absolute efficiency increase of about 1%. Finally, a practical assessment of the efficiency potential for the 4T perovskite/c-Si tandem mini-module is carried out, indicating that with a relatively simple 4T tandem module structure the efficiency of a single-junction c-Si mini-module (19.3%) can be improved by absolute 4.5%.