Atomic Layer Deposition of ZnO on InP Quantum Dot Films for Charge Separation, Stabilization, and Solar Cell Formation

Journal article (2020)

Authors

R.W. Crisp ChemE/Opto-electronic Materials - AS
J. Alkemade ChemE/Product and Process Engineering - AS
N.R.M. Kirkwood ChemE/Opto-electronic Materials - AS
G. Grimaldi ChemE/Opto-electronic Materials - AS
S.S. Kinge Toyota Motor Europe
L.D.A. Siebbeles ChemE/Opto-electronic Materials - AS
J.R. van Ommen ChemE/Product and Process Engineering - AS
A.J. Houtepen ChemE/Opto-electronic Materials - AS
Research Group
ChemE/Opto-electronic Materials (AS) (TU Delft)
Copyright: © 2020 R.W. Crisp, Fatemeh S.M. Hashemi, J. Alkemade, N.R.M. Kirkwood, G. Grimaldi, S.S. Kinge, L.D.A. Siebbeles, J.R. van Ommen, A.J. Houtepen
DOI: https://doi.org/10.1002/admi.201901600
More Info
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Published Date

2020

Language

English

Faculty

Applied Sciences

Department

ChemE/Chemical Engineering

Research Group

ChemE/Opto-electronic Materials

Abstract

To improve the stability and carrier mobility of quantum dot (QD) optoelectronic devices, encapsulation or pore infilling processes are advantageous. Atomic layer deposition (ALD) is an ideal technique to infill and overcoat QD films, as it provides excellent control over film growth at the sub-nanometer scale and results in conformal coatings with mild processing conditions. Different thicknesses of crystalline ZnO films deposited on InP QD films are studied with spectrophotometry and time-resolved microwave conductivity measurements. High carrier mobilities of 4 cm2 (V s)−1 and charge separation between the QDs and ZnO are observed. Furthermore, the results confirm that the stability of QD thin films is strongly improved when the inorganic ALD coating is applied. Finally, proof-of-concept photovoltaic devices of InP QD films are demonstrated with an ALD-grown ZnO electron extraction layer.