The LinoSPAD2 camera combines a 512×1 linear single-photon avalanche diode (SPAD) array with an FPGA-based photon-counting and time-stamping platform, to create a reconfigurable sensing system capable of detecting single photons. The read-out is fully parallel, where each SPAD is connected to a different FPGA input. The hardware can be reconfigured to achieve different functionalities, such as photon counters, time-to-digital converter (TDC) arrays and histogramming units. Time stamping is performed by an array of 64 TDCs, with 20 ps resolution (LSB), serving 256 channels by means of 4:1 sharing. At sensor level, the pixel pitch is 26.2 μm with a fill factor of 25.1%. The median dark count rate of each SPAD at room temperature is below 100 cps at 6V excess bias, the single-photon timing resolution (SPTR) of each channel is 50 ps FWHM, and the peak photon detection probability reaches ~50% at 510 nm at the same excess bias. The fill factor can be increased by 2.3× by means of microlenses, with good spatial uniformity and flat spectral response above 400 nm. At system level, the average instrument response function (IRF) is 135 ps FWHM. The LinoSPAD2 camera enables a wide range of time-of-flight and time-resolved applications, including 3D imaging, fluorescence lifetime imaging microscopy (FLIM), heralded spectroscopy, and compressive Raman imaging, to name a few. Thanks to its features, LinoSPAD2 is a novel generation of reconfigurable single-photon image sensors capable of adapting their read-out and processing to match application-specific requirements, and combining SPAD arrays with advanced, massively-parallel computational functionalities.

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Single-photon avalanche diode (SPAD) arrays can be used for single-molecule localization microscopy (SMLM) because of their high frame rate and lack of readout noise. SPAD arrays have a binary frame output, which means photon arrivals should be described as a binomial process rather than a Poissonian process. Consequentially, the theoretical minimum uncertainty of the localizations is not accurately predicted by the Poissonian Cramér-Rao lower bound (CRLB). Here, we derive a binomial CRLB and benchmark it using simulated and experimental data. We show that if the expected photon count is larger than one for all pixels within one standard deviation of a Gaussian point spread function, the binomial CRLB gives a 46% higher theoretical uncertainty than the Poissonian CRLB. For typical SMLM photon fluxes, where no saturation occurs, the binomial CRLB predicts the same uncertainty as the Poissonian CRLB. Therefore, the binomial CRLB can be used to predict and benchmark localization uncertainty for SMLM with SPAD arrays for all practical emitter intensities.

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Single-photon avalanche diode (SPAD) arrays are solid-state detectors that offer imaging capabilities at the level of individual photons, with unparalleled photon counting and time-resolved performance. This fascinating technology has progressed at a very fast pace in the past 15 years, since its inception in standard CMOS technology in 2003. A host of architectures have been investigated, ranging from simpler implementations, based solely on off-chip data processing, to progressively “smarter” sensors including on-chip, or even pixel level, time-stamping and processing capabilities. As the technology has matured, a range of biophotonics applications have been explored, including (endoscopic) FLIM, (multibeam multiphoton) FLIM-FRET, SPIM-FCS, super-resolution microscopy, time-resolved Raman spectroscopy, NIROT and PET. We will review some representative sensors and their corresponding applications, including the most relevant challenges faced by chip designers and end-users. Finally, we will provide an outlook on the future of this fascinating technology.

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We present the world's first backside-illuminated (BSI) single-photon avalanche diode (SPAD) based on standard silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. This SPAD achieves a good dark count rate (DCR) after backside etching, comparable to DCRs of BSI SPADs fabricated on bulk wafers. Unlike bulk-wafer-based BSI SPADs, which typically suffer from poor violet and blue sensitivity, the proposed BSI SPAD features increased near-ultraviolet sensitivity as well as significant sensitivity in the violet and blue spectral ranges, thanks to the ultrathin-body SOI. To the best of our knowledge, this is the best result ever reported for any BSI SPAD in the standard CMOS technology. In addition, it also shows high sensitivity at long wavelengths thanks to the interface between silicon and silicon-dioxide layers. Therefore, it achieves a photon detection probability over 26% at 500 nm and 10% in the 400-875 nm wavelength range at 3 V excess bias voltage. The timing jitter is 119 ps full width at half maximum at the same operation condition at 637 nm wavelength. For the proposed BSI SPAD, the buried oxide layer in SOI wafers is used as an etching stop during the wafer backside-etching process, and therefore it ensures the excellent performance uniformity in large arrays.

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Confocal microscopes use photomultiplier tubes and hybrid detectors due to their large dynamic range, which typically exceeds the one of single-photon avalanche diodes (SPADs). The latter, due to their photon counting operation, are usually limited to an output count rate to 1/T_dead. In this paper, we present a thorough analysis, which can actually be applied to any photon counting detector, on how to extend the SPAD dynamic range by exploiting the nonlinear photon response at high count rates and for different recharge mechanisms. We applied passive, active event-driven and clock-driven (i.e. clocked, following quanta image sensor response) recharge directly to the SPADs. The photon response, photon count standard deviation, signal-to-noise ratio and dynamic range were measured and compared to models. Measurements were performed with a CMOS SPAD array targeted for image scanning microscopy, featuring best-in-class 11 V excess bias, 55% peak photon detection probability at 520 nm and >40% from 440 to 640 nm. The array features an extremely low median dark count rate below 0.05 cps/μm² at 9 V of excess bias and 0°C. We show that active event-driven recharge provides ×75 dynamic range extension and offers novel ways for high dynamic range imaging. When compared to the clock-driven recharge and the quanta image sensor approach, the dynamic range is extended by a factor of ×12.7-26.4. Additionally, for the first time, we evaluate the influence of clock-driven recharge on the SPAD afterpulsing.

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SPAD (single-photon avalanche diode) arrays are single-photon sensors, which enable photon counting and unparalleled time-resolved imaging. In this paper, we will detail the architecture and characteristics of three representative SPAD arrays, implemented in standard CMOS technologies and targeted to a range of applications such as biophotonics, basic sciences, and engineering. Two sensors feature a high-performance pixel and enable time-gated and TCSPC operation, respectively. The third sensor is a line array whose pixels are coupled on a one-To-one basis with an FPGA for flexible data acquisition and processing.

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Silicon Photomultipliers (SiPMs), which emerged as all solid state, MRI compatible alternative to PMTs, can provide high miniaturization and increased timing performance. Large effort has been spent in improving the figures of merit of such devices (e.g. jitter, timing resolution, sensitivity, noise, etc.). In this paper we propose a novel approach relying on the combination of photonic crystals with microlens arrays, integrated on top of each SPAD cell in the SiPM, to collimate and focus the light generated by a scintillator, in order to improve the overall timing performance of the system so as to approach the 10ps target, while at the same time reducing the noise floor (Dark Count Rate).

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sCMOS imagers are currently utilized (replacing EMCCD imagers) to increase the acquisition speed in super resolution localization microscopy. Single-photon avalanche diode (SPAD) imagers feature frame rates per bit depth comparable to or higher than sCMOS imagers, while generating microsecond 1-bit-frames without readout noise, thus paving the way to in-depth time-resolved image analysis. High timing resolution can also be exploited to explore fluorescent dye blinking and other photophysical properties, which can be used for dye optimization. We present the methodology for the blinking analysis of fluorescent dyes on experimental data. Furthermore, the recent use of microlenses has enabled a substantial increase of SPAD imager overall sensitivity (12-fold in our case), reaching satisfactory values for sensitivity-critical applications. This has allowed us to record the first super resolution localization microscopy results obtained with a SPAD imager, with a localization uncertainty of 20 nm and a resolution of 80 nm.

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Summary form only given. Single photon detectors allow us to work with the weakest signals such as auto-fluorescent biological sources. In combination with time gated operation mode, an array of detectors can be used as Fluorescence Lifetime Imaging system with extremely high sensitivity.Here we present fluorescence lifetime imaging using the `SwissSPAD' [1] sensor, an extensive 512-by-128pixel array of time-gated single photon avalanche diodes (SPADs). By taking a series of gated measurements and changing the gate delay, fluorescent lifetimes can be retrieved for each individual pixels. Over 65 thousand independent SPAD pixels creates a detailed spatial map of fluorescence lifetimes in the field of view of the sensor. In this work, we are presenting two milestones of our research. Firstly, we present proof of principle imaging lifetime measurements of Rhodamine B and Fluorescein, with lifetimes of 1.68ns and 4ns ns respectively, excited using a 532 nm 10 picosecond laser. Secondly, we show that using 266 nm excitation, we can distinguish between free(0.5ns) and bound(2.2ns) NADH using unlabelled auto-fluorescence. Freeand bound-NADH are known to be markers for the cancer tissues [2].@en

The paper presents a camera comprising 512 × 128 pixels capable of single-photon detection and gating with a maximum frame rate of 156 kfps. The photon capture is performed through a gated single-photon avalanche diode that generates a digital pulse upon photon detection and through a digital one-bit counter. Gray levels are obtained through multiple counting and accumulation, while time-resolved imaging is achieved through a 4-ns gating window controlled with subnanosecond accuracy by a field-programmable gate array. The sensor, which is equipped with microlenses to enhance its effective fill factor, was electro-optically characterized in terms of sensitivity and uniformity. Several examples of capture of fast events are shown to demonstrate the suitability of the approach. @en

In near infrared fluorescence-guided surgical oncology, it is challenging to distinguish healthy from cancerous tissue. One promising research avenue consists in the analysis of the exogenous fluorophores’ lifetime, which are however in the (sub-)nanosecond range. We have integrated a single-photon pixel array, based on standard CMOS SPADs (single-photon avalanche diodes), in a compact, time-gated measurement system, named FluoCam. In vivo measurements were carried out with indocyanine green (ICG)-modified derivatives targeting the αvβ3 integrin, initially on a genetically engineered mouse model of melanoma injected with ICG conjugated with tetrameric cyclic pentapeptide (ICG−E[c(RGD f K)4]), then on mice carrying tumour xenografts of U87-MG (a human primary glioblastoma cell line) injected with monomeric ICG−c(RGD f K). Measurements on tumor, muscle and tail locations allowed us to demonstrate the feasibility of in vivo lifetime measurements with the FluoCam, to determine the characteristic lifetimes (around 500 ps) and subtle lifetime differences between bound and unbound ICG-modified fluorophores (10% level), as well as to estimate the available photon fluxes under realistic conditions@en

For many scientific applications, electron multiplying charge coupled devices (EMCCDs) have been the sensor of choice because of their high quantum efficiency and built-in electron amplification. Lately, many researchers introduced scientific complementary metal-oxide semiconductor (sCMOS) imagers in their instrumentation, so as to take advantage of faster readout and the absence of excess noise. Alternatively, single-photon avalanche diode (SPAD) imagers can provide even faster frame rates and zero readout noise. SwissSPAD is a 1-bit 512×128 SPAD imager, one of the largest of its kind, featuring a frame duration of 6.4 μs. Additionally, a gating mechanism enables photosensitive windows as short as 5 ns with a skew better than 150 ps across the entire array. The SwissSPAD photon detection efficiency (PDE) uniformity is very high, thanks on one side to a photon-to-digital conversion and on the other to a reduced fraction of "hot pixels" or "screamers", which would pollute the image with noise. A low native fill factor was recovered to a large extent using a microlens array, leading to a maximum PDE increase of 12×. This enabled us to detect single fluorophores, as required by ground state depletion followed by individual molecule return imaging microscopy (GSDIM). We show the first super resolution results obtained with a SPAD imager, with an estimated localization uncertainty of 30 nm and resolution of 100 nm. The high time resolution of 6.4 μs can be utilized to explore the dye's photophysics or for dye optimization. We also present the methodology for the blinking analysis on experimental data.@en

While CMOS single-photon avalanche diode (SPAD) technology has steadily advanced, improving noise, timing resolution, and sensitivity, spatial resolution has been increasing as well. The increase in the number of pixels has made a comprehensive analysis of nonuniformity and its effects meaningful, allowing a more accurate comparison of SPAD imagers with other high-end scientific imagers, such as electron multiplying charge-coupled device and scientific CMOS. A comprehensive nonuniformity analysis was conducted on a 512 × 128 pixel gated SPAD imager, where dark noise, afterpulsing, crosstalk, signal response, and shot noise were measured. This analysis has led to a variety of postprocessing algorithms to improve the linearity of the response as for example required by ground state depletion microscopy-based superresolution microscopy and other techniques. We derived a new correction formula for the count rate applicable to 1-b SPAD imagers, and we measured a significant improvement of photon detection efficiency using microlenses. These techniques were used to validate the suitability of the imager in fluorescence microscopy examples.@en

 Excision of the whole tumor is crucial, but remains difficult for many tumor types. Fluorescence lifetime imaging could be helpful intraoperative to differentiate normal from tumor tissue. In this study we investigated the difference in fluorescence lifetime imaging of indocyanine green coupled to cyclic RGD free in solution/serum or bound to integrins e.g. in tumors. The U87-MG glioblastoma cell line, expressing high integrin levels, was cultured to use in vitro and to induce 4 subcutaneous tumors in a-thymic mice (n=4). Lifetimes of bound and unbound probe were measured with an experimental time-domain single-photon avalanche diode array (time resolution <100ps). In vivo measurements were taken 30-60 minutes after intravenous injection, and after 24 hours. The in vitro lifetime of the fluorophores was similar at different concentrations (20, 50 and 100μM) and showed a statistically significant higher lifetime (p<0.001) of bound probe compared to unbound probe. In vivo, lifetimes of the fluorophores in tumors were significantly higher (p<0.001) than at the control site (tail) at 30-60 minutes after probe injection. Lifetimes after 24 hours confirmed tumor-specific binding (also validated by fluorescence intensity images). Based on the difference in lifetime imaging, it can be concluded that it is feasible to separate between bound and unbound probes in vivo. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). @en