This brief presents a 0.65% relative inaccuracy CMOS temperature sensor with a duty-cycle-modulated (DCM) output. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (V_{PTAT}) and a complementary to absolute temperature voltage (V_{CTAT}), wh
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This brief presents a 0.65% relative inaccuracy CMOS temperature sensor with a duty-cycle-modulated (DCM) output. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (V_{PTAT}) and a complementary to absolute temperature voltage (V_{CTAT}), which are then modulated to a digital-friendly duty-cycle output. Dynamic element matching with Kelvin connection (KC-DEM) is applied to improve the accuracy of V_{PTAT}. To enhance the robustness of the sensor, a continuous-time dynamic single-threshold hysteresis comparator with high energy efficiency is proposed. Implemented in a standard 0.13-{m} CMOS process, the sensor has an active area of 0.086 mm2 and achieves an inaccuracy of ±0.54 °C (3) from -40 °C to 125 °C.
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