A BJT-Based CMOS Temperature Sensor with Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy from -40 °c to 125 °c

Journal article (2021)

Authors

Zhenyan Huang Zhejiang University
Z. Tang Zhejiang University, Electronic Instrumentation - EEMCS
Xiao Peng Yu Zhejiang University
Zheng Shi Zhejiang University
Ling Lin Vango Technologies Inc., Hangzhou
Nick Nianxiong Tan Zhejiang University
Research Group
Electronic Instrumentation (EEMCS) (TU Delft)
Copyright: © 2021 Zhenyan Huang, Z. Tang, Xiao Peng Yu, Zheng Shi, Ling Lin, Nick Nianxiong Tan
DOI: https://doi.org/10.1109/TCSII.2021.3068283
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Published Date

2021

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

This brief presents a 0.65% relative inaccuracy CMOS temperature sensor with a duty-cycle-modulated (DCM) output. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (V_{PTAT}) and a complementary to absolute temperature voltage (V_{CTAT}), which are then modulated to a digital-friendly duty-cycle output. Dynamic element matching with Kelvin connection (KC-DEM) is applied to improve the accuracy of V_{PTAT}. To enhance the robustness of the sensor, a continuous-time dynamic single-threshold hysteresis comparator with high energy efficiency is proposed. Implemented in a standard 0.13-{m} CMOS process, the sensor has an active area of 0.086 mm2 and achieves an inaccuracy of ±0.54 °C (3) from -40 °C to 125 °C.

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