This paper comprehensively reviews several techniques that address the static and dynamic voltage balancing of series-connected MOSFETs. The effectiveness of these techniques was validated through simulations and experiments. Dynamic voltage-balancing techniques include gate signal delay adjustment methods, passive snubbers, passive clamping circuits, and hybrid solutions. Based on the experimental results, the advantages and disadvantages of each technique are investigated. Combining the gate-balancing core method with an RC snubber, which has proven both technically and commercially attractive, provides a robust solution. If the components are sorted and binned, voltage-balancing techniques may not be necessary, further enhancing the commercial viability of series-connected MOSFETs. An investigation of gate driver topologies yields one crucial conclusion: magnetically isolated gate drivers offer a simple and cost-effective solution for high-frequency (HF) applications (2.5–50 kHz) above 8 kV with an increased number of series devices. Below 8 kV, it is advantageous to move the isolation barrier from the gate drive IC to an optocoupler and isolated supply, allowing for a simple design with commercially available components.@en

Innovative test methods are required to keep up with the increased demand for insulation materials which can withstand the high-frequency square-wave voltages generated by power-electronic equipment. Test systems using high-voltage, high-frequency transformers have proven versatile and easy to realise. The authors investigate the application of amorphous cut cores in such transformers. Analytical and numerical models for the transformer and its frequency response are developed, aiding the design process. An amorphous core-based transformer is designed for 8 kV_pk output at 100 kHz and compared to two previous designs based on ferrite cores. The frequency and pulse response, as well as the high-voltage and thermal performance, are evaluated. The comparison shows that while the low parasitics of the amorphous-based transformer allow for superior frequency response, they are unsuitable for long-duration tests with high pulse repetition frequencies (25–100 kHz) due to increased core losses. The partial discharge inception and flashover voltage are comparable to the ferrite-based transformers.

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