A long photoluminescence decay lifetime has been regarded as a generic indication of long charge carrier recombination lifetime in semiconductors such as metal halide perovskites (MHPs), which have shown tremendous success in solar cells. Here, we report that MHP polycrystalline films with extrinsic metal ions have a very long charge recombination lifetime, but a much shorter photoluminescence decay lifetime, and this huge difference can be explained by a model of lateral homojunction within each individual grain. The lateral homojunction is formed due to the doping along grain boundaries by metal ions, and then verified by nanoscale potential mapping and transient photo-response mapping. The built-in electric field within each grain reduces the recombination of free charge carriers within the perovskite grain and along grain boundaries, while the free electrons and holes are collected to cathode and anode through the grain boundaries and grain interiors, respectively. Then, the efficiencies of MHP polycrystalline solar cells are increased.

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The optimization of water networks supports the decision-making process by identifying the optimal trade-off between costs and performance (e.g., resilience and leakage). A major challenge in the domain of water distribution systems (WDSs) is the network (re)design. While the complex nature of WDS has already been explored with complex network analysis (CNA), literature is still lacking a CNA of optimal water networks. Based on a systematic CNA of Pareto-optimal solutions of different WDSs, several graph characteristics are identified, and a newly developed CNA design approach for WDSs is proposed. The results show that obtained designs are comparable with results found by evolutionary optimization, but the CNA approach is applicable for large networks (e.g., 150,000 pipes) with a substantially reduced computational effort (runtime reduction up to 5 orders of magnitude).

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Industrial bifacial n-type front and back contact (nFAB) silicon solar cells, consisting of a boron-doped p+ emitter and a phosphorus-doped n+ back surface field (BSF), are known to give good bifaciality, high and stabilized efficiency. One possible approach to further enhance the cell efficiency is to convert conventional passivated emitter and rear totally diffused (PERT) into rear locally diffused (PERL) structure. Herein, bifacial nFAB PERT and PERL cells are fabricated by combining atmospheric pressure chemical vapor deposition (APCVD) of phosphosilicate glass (PSG) as doping source and laser processing. For PERL cells, two approaches are studied to locally form phosphorus-doped BSF: 1) laser doping, and 2) laser ablation of a diffusion barrier layer. For ablation approach, an alkaline treatment is introduced immediately after laser process, which leads to the formation of locally textured BSF. Due to this locally textured contact, the resultant fill factor (FF) and series resistance (Rs) loss of the PERL cells are even less than that of the reference PERT cells. As a result, the champion cell of PERL shows a good efficiency of 21.3% with open-circuit voltage (Voc) of 662 mV, short-circuit current density (Jsc) of 39.6 mA cm−2, and a high FF of 81.1%.@en