A Compact Energy Efficient CMOS Permittivity Sensor Based on Multiharmonic Downconversion and Tunable Impedance Bridge

Conference paper (2018)

Authors

G. Vlachogiannakis Electronics - EEMCS
Z. Hu Electronics - EEMCS
H. Thippur Shivamurthy Electronics - EEMCS
A. Neto Tera-Hertz Sensing - EEMCS
M. A P Pertijs Electronic Instrumentation - EEMCS
Michiel A.P. Pertijs Electronic Instrumentation - EEMCS
Michiel Pertijs Electronic Instrumentation - EEMCS
M. Pertijs Electronic Instrumentation - EEMCS
Michiel A P Pertijs Electronic Instrumentation - EEMCS
M.A.P. Pertijs Electronic Instrumentation - EEMCS
Michiel A. Pertijs Electronic Instrumentation - EEMCS
MAP Pertijs Electronic Instrumentation - EEMCS
L.C.N. de Vreede Electronics - EEMCS
M. Spirito Electronics - EEMCS
Research Group
Electronics (EEMCS) (TU Delft)
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Published Date

2018

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronics

Abstract

This paper presents a 0.15×0.3 mm2 complex permittivity sensor integrated in a 40-nm CMOS node. A single-ended patch, employed as a near-field sensing element, is integrated with a double-balanced, fully-differential tunable impedance bridge that is driven by a square RF pulse. The multi-harmonic, interme-diate-frequency down-conversion architecture achieves a compact form factor and fast multi-frequency readout. Measurement results show good agreement with theoretical values and the measured relative permittivity variation remains below 0.3 over a 0.1-10 GHz range at a 1-ms measurement time. The energy efficiency resulting from the fast measurement time and the record-small active area allows integration in battery-operated wearables.

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