MOSFET-Based and P-N Diode Based Temperature Sensor in a 4H-SiC CMOS Technology

Conference paper (2023)

Authors

Jiarui Mo Electronic Components, Technology and Materials -

J. Mo Electronic Components, Technology and Materials -

Jinglin Li Electronic Components, Technology and Materials -

J. Li Electronic Components, Technology and Materials -

Y. Zhang Electronic Components, Technology and Materials -

Yaqian Zhang Electronic Components, Technology and Materials -

Alexander May Fraunhofer Institute for Integrated Systems and Devices Technology IISB

Tobias Erlbacher Fraunhofer Institute for Integrated Systems and Devices Technology IISB

Kouchi Zhang Electronic Components, Technology and Materials -

Guoqi Zhang Electronic Components, Technology and Materials -

S. Vollebregt Electronic Components, Technology and Materials -

Sten Vollebregt Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

Temperature sensing Harsh environment CMOS Silicon carbide

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Published Date

2023

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

This paper presents p-n diode temperature sensors and MOSFET temperature sensors in low-voltage silicon carbide (SiC) CMOS technology. The reported temperature sensors directly make use of the existing doping layers in the CMOS process, thus enabling the monolithic integration of the SiC temperature transducer and the SiC readout electronics. The temperature sensor is characterized from 25 to 200°C. The diode-based temperature sensor has a maximum sensitivity of 3.27 mV/°C and a maximum R 2 of 99.81%. The MOSFET-based temperature sensor achieved a maximal sensitivity of 16.5 mV/°C, however, with less linearity (R 2 max = 99.11%). This technology shows a unique potential for implementing harsh environment smart temperature sensors.

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