Local poly-SiOe carrier-selective contacts deposited through a hard mask

Abstract

Passivating contacts in the front-rear contacted c-Si solar cells enhances the device performance by quenching the contact recombination and enabling sufficient carrier transport. Tunneling oxide passi- vating contact (TOPCon) which consists of an interfacial oxide and a poly-SiO𝑥 layer is one of the most promising contact techniques in passivating both surfaces of the silicon wafer. However, the full area poly-SiO𝑥 layer is absorptive when it is applied at the front side which has become an efficiency limiting factor. In this project, an advanced local poly-SiO𝑥 passivating contact architecture is proposed and presented. The local poly-SiO𝑥 passivating contacts, so-called “poly-SiO𝑥 finger”, is deposited through a hard mask at predefined locations which will be only placed underneath the metal contacts. The formation of poly-SiO𝑥 finger and its application in the solar cells are discussed.

First, a silicon wafer hard mask is fabricated by a lithography process followed by a KOH wet chemical etch-back process. Specified openings down to 38.7 𝜇m are established which isolate sections of the substrate for the poly-SiO𝑥 finger formation. P+ doped a-SiO𝑥 :H is deposited using PECVD with SiO𝑥 p+ diffused emitter commercial Cz wafers through the hard mask. By investigating the influence of deposition parameters during the PECVD, specifically the power and pressure, decent uniformity of the finger deposition is achieved. An optimized deposition condition of the doped a-SiO𝑥 :H is established for the poly-SiO𝑥 finger formation: an RF power source at 15 Watt, a chamber pressure of 1.5 mbar, and a substrate temperature of 180 °C. A narrow poly-SiO𝑥 finger with a width of 40.0 𝜇m has been demonstrated.

Second, the passivation properties of the symmetrical samples are examined by varying the poly-SiO𝑥 and Al2O3 thickness for the hole carrier selective contacts. A full area p+ TOPCon and Al2O3 symmetric samples were coated on the textured diffused p+ surface with an n-type c-Si substrate to investigate the process parameters on the passivation properties. The optimal 𝑖𝑉𝑜𝑐 of p+ TOPCon samples is 662 𝑚𝑉 and a corresponding 𝐽0 of 156 𝑓 𝐴 𝑐𝑚2 which is obtained with a poly-SiO𝑥 thickness of 50 nm when annealed at 850 °C. The optimal thickness for the Al2O3 passivation layer is achieved by depositing a 20 nm thick layer followed by FGA, with an 𝑖𝑉𝑜𝑐 of 692 𝑚𝑉 and a 𝐽0 of 22.4 𝑓 𝐴/𝑐𝑚2.

Finally, a process flowchart has been created to fabricate c-Si solar cells with the local p+ TOPCon on the front p+ diffused emitter and a full area n+ TOPCon on the rear side. A localized polished area is made by a poly-etch process for the alignment between the substrate and the pattern in the lithography mask. Using the ascertained parameters during the optimization, NAOS-SiO𝑥 combining with 50 nm-thick doped p+ a-SiO𝑥 :H fingers are applied on the p+ diffused surface and 100 nm-thick n+a-SiO𝑥 :H on the rear side. A annealing step is performed for the crystallization. A 20 nm-thick Al2O3 followed by a 75 nm SiN𝑥 layer are deposited on the front side and 100 nm SiN𝑥 layer is applied on the rear side. Lithography, wet chemical etch-back together with Al/Ag(front/rear) evaporation are utilized for solar cells metallization. The fabricated c-Si solar cells with poly-SiO𝑥 fingers has a champion efficiency with an efficiency of 7.91 %, with a 𝑖𝑉𝑜𝑐 of 562 𝑚𝑉, 𝑖𝑛𝑡 𝐽𝑠𝑐 of 34.7 𝑚𝐴 𝑐𝑚2 and fill factor of 40.5 %. The limited performance originates from the poor passivation in the poly-SiO𝑥 local contact area and severe 𝑖𝑉𝑜𝑐 drop after the metallization process. For further improvement, good performing c-Si solar cells by minimizing the recombination in the poly-SiO𝑥 local fingers contacts area and optimizing metallization steps are expected to be fabricated .