Radio-Frequency Reflectometry in Silicon-Based Quantum Dots

Journal article (2021)

Authors

Y-Y Liu Harvard University
S.G.J. Philips QCD/Vandersypen Lab - QuTech Advanced Research Centre , QuTech Advanced Research Centre, Kavli institute of nanoscience Delft
L. A. Orona Harvard University
Nodar Samkharadze QuTech Advanced Research Centre, QCD/Vandersypen Lab - QuTech Advanced Research Centre
T. McJunkin University of Wisconsin-Madison
E. R. Macquarrie University of Wisconsin-Madison
M. A. Eriksson University of Wisconsin-Madison
L.M.K. Vandersypen QuTech Advanced Research Centre, QN/Vandersypen Lab - AS , Kavli institute of nanoscience Delft
A. Yacoby Harvard University
Research Group
QCD/Vandersypen Lab (QuTech Advanced Research Centre) (TU Delft)
Copyright: © 2021 Y. Y. Liu, S.G.J. Philips, L. A. Orona, Nodar Samkharadze, T. McJunkin, E. R. Macquarrie, M. A. Eriksson, L.M.K. Vandersypen, A. Yacoby
DOI: https://doi.org/10.1103/PhysRevApplied.16.014057
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Published Date

2021

Language

English

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Faculty

QuTech Advanced Research Centre

Department

Quantum Computing Division

Research Group

QCD/Vandersypen Lab

Abstract

Radio-frequency (rf) reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of rf readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that on-chip modifications enable high-performance charge readout in Si/SixGe1-x quantum dots, achieving a fidelity of 99.9% for a measurement time of 1μs.

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