Erik P.A.M. Bakkers

Transmission phase read-out of a large quantum dot in a nanowire interferometer

Journal article (2020) - F. Borsoi (author), F. Borsoi (author), F. Borsoi (author), Kun Zuo (author), Sasa Gazibegovic (author), R.L.M. op het Veld (author), Erik P.A.M. Bakkers (author), Leo P. Kouwenhoven (author), Leo P. Kouwenhoven (author), Leo P. Kouwenhoven (author), Leo P. Kouwenhoven (author), S. Heedt (author), S. Heedt (author), S. Heedt (author), S. Heedt (author)

Detecting the transmission phase of a quantum dot via interferometry can reveal the symmetry of the orbitals and details of electron transport. Crucially, interferometry will enable the read-out of topological qubits based on one-dimensional nanowires. However, measuring the tran ...

Selective excitation and detection of spin states in a single nanowire quantum dot

Journal article (2009) - MHM van Weert (author), N. Akopian (author), U Perinetti (author), MP van Kouwen (author), R Algra (author), MA Verheijen (author), Erik P.A.M. Bakkers (author), Leo P. Kouwenhoven (author), V.G. Zwiller (author)

Diameter-dependent conductance of InAs nanowires

Journal article (2009) - M Scheffler (author), S. Nadj-Perge (author), Leo P. Kouwenhoven (author), MT Borgstrom (author), Erik P.A.M. Bakkers (author)

Electric field control of magnetoresistance in InP nanowires with ferromagnetic contacts

Journal article (2009) - F.A. Zwanenburg (author), DW van der Mast (author), HB Heersche (author), Leo P. Kouwenhoven (author), Erik P.A.M. Bakkers (author)

Zinc Iicorporation via the vapor-liquid-solid mechanism into InP nanowires

Journal article (2009) - MHM van Weert (author), A Helman (author), W van den Enden (author), R Algra (author), MA Verheijen (author), MT Borgstrom (author), G Immink (author), JJ Kelly (author), Leo P. Kouwenhoven (author), Erik P.A.M. Bakkers (author)

Quantum interference effects in InAs semiconductor nanowires

Journal article (2009) - YJ Doh (author), AL Roest (author), Erik P.A.M. Bakkers (author), S de Franceschi (author), Leo P. Kouwenhoven (author)

Orientation-dependent optical-polarization properties of single quantum dots in nanowires

Journal article (2009) - MHM van Weert (author), N. Akopian (author), Leo P. Kouwenhoven (author), V.G. Zwiller (author), F Kelkensberg (author), U Perinetti (author), MP van Kouwen (author), J Gomez Rivas (author), MT Borgstrom (author), E Algra (author), MA Verheijen (author), Erik P.A.M. Bakkers (author)

Tunable double quantum dots in InAs nanowires

Journal article (2008) - M Scheffler (author), S. Nadj-Perge (author), Leo P. Kouwenhoven (author), MT Borgstrom (author), Erik P.A.M. Bakkers (author)

Crystal size as a thermodynamic parameter

Conference paper (2008) - E Vlieg (author), A Bode (author), M. Leeman (author), RM Kellogg (author), MA Verheijen (author), Erik P.A.M. Bakkers (author), R Algra (author), MA Deij (author), WJP van Enckevort (author), H Meekes (author), W.L. Noorduin (author), J.H. ter Horst (author), Peter J. Jansens (author), A, Millemaggi (author), B. Kaptein (author)

Andreev reflection versus Coulomb blockade in hybrid semiconductor nanowire devices

Journal article (2008) - YJ Doh (author), S de Franceschi (author), Erik P.A.M. Bakkers (author), Leo P. Kouwenhoven (author)

Optics with single nanowires

Journal article (2008) - V.G. Zwiller (author), N. Akopian (author), L Liu (author), JC Harmand (author), Y. Kobayashi (author), J Motohisa (author), MHM van Weert (author), MP van Kouwen (author), U Perinetti (author), Leo P. Kouwenhoven (author), R Algra (author), J Gomez Rivas (author), Erik P.A.M. Bakkers (author), G patriarche (author)

Mechanical Characterization of III-V Nanowire Using Molecular Dynamics Simulation

Conference paper (2007) - AW Dawotola (author), C.A. Yuan (author), W.D. van Driel (author), Erik P.A.M. Bakkers (author), Kouchi Zhang (author), Guoqi Zhang (author)

Mechanical stiffness and density of III-V (GaAs) nanowire (NW) are studied by atomistic simulation in the , and directions. Series of molecular models are established and mechanical characteristics of the crystal orientations are considered. The simulation results indicate that t ...

Scanned probe imaging of quantum dots inside InAs nanowires

Journal article (2007) - AC Bleszynski (author), F.A. Zwanenburg (author), RM Westervelt (author), AL Roest (author), Erik P.A.M. Bakkers (author), Leo P. Kouwenhoven (author)

Modeling of the mechanical stiffness of the GaP/GaAs nanowires with point defects/stacking faults

Conference paper (2007) - AW Dawotola (author), C.A. Yuan (author), W.D. van Driel (author), Kouchi Zhang (author), Guoqi Zhang (author), Erik P.A.M. Bakkers (author)

The semiconductor type III-V nanowires (e.g., GaAs, GaP, InAs, InP, etc.) has excellent electronic/optical properties for the application of next-generation nano-scaled transistor, light-emitting diode and bio/chemical sensors. However, the electronic conductance of the nanowire ...

Single quantum dot nanowire LEDs

Journal article (2007) - ED Minot (author), F Kelkensberg (author), MP van Kouwen (author), JA van Dam (author), Leo P. Kouwenhoven (author), V.G. Zwiller (author), MT Borgstrom (author), O Wunnicke (author), MA Verheijen (author), Erik P.A.M. Bakkers (author)

Towards vertical III-V nanowire devices on silicon

Conference paper (2007) - Erik P.A.M. Bakkers (author), MT Borgstrom (author), A Helman (author), O Wunnicke (author), MA Verheijern (author), W van den Eijnden (author), MHM van Weert (author), ED Minot (author), F Kelkensberg (author), MP van Kouwen (author), JA van Dam (author), Leo P. Kouwenhoven (author), V.G. Zwiller (author)