A proposal for fast-switching broadband frequency-shifting technology making use of frequency conversion in a nonlinear crystal is set forth, whereby the shifting is imparted to the converted photons by creating a bank of frequency-displaced pump modes that can be selected by a photonic switch and directed to the nonlinear crystal. Proof-of-principle results show that the expected frequency-shifting operation can be achieved. Even though the dimensions of the currently employed crystal and significant excess loss in the experimental setup prevented conversion of single-photon-level inputs, thorough experimental and theoretical analysis of the noise contribution allowed for estimation of the system performance in an optimized scenario, where the expected signal-to-noise ratio (SNR) for single-photon conversion and frequency shifting can reach up to 25 dB with proper narrowband filtering and state-of-the-art devices. The proposed frequency-shifting solution figures as a promising candidate for applications in frequency-multiplexed quantum repeater architectures with 25 dB output SNR (with 20% conversion efficiency) and capacity for 16 channels spread around a 100 GHz spectral region.

In this work, we show that the quality of the precursor and the thin film preparation strongly affect the optoelectronic properties of the 2D perovskite BA₂PbI₄. 2D perovskites with alkylammonium organic cations such as butylammonium (BA) are relatively soft structures that exhibit large dynamic disorder and phase variations. Here we show, by a variety of spectroscopy techniques (steady state absorption, photoluminescence and ultrafast transient absorption), that at temperatures below the phase transition (253 K) the material exhibits excitonic features from the room temperature phase (due to incomplete structural transition) and a broadband emission at 560–600 nm (due to self-trapped excitons) with varied relative intensities depending on the precursors and processing conditions. This suggests that the processing conditions have a large influence on the crystallization and introduction of extrinsic defect impurities directly affecting the optoelectronic properties. Making absolute statements about the properties of BA₂PbI₄ requires improved control over the materials thin film deposition and a better understanding of the role of the lattice vibrational dynamics and extrinsic defects on the exciton dynamics.