Resilience is the ability of a system to withstand and stay operational in the face of an unexpected disturbance or unpredicted changes. Recent studies on air transport system resilience focus on topology characteristics after the disturbance and measure the robustness of the network with respect to connectivity. The dynamic processes occurring at the node and link levels are often ignored. Here we analyze airport network resilience by considering both structural and dynamical aspects. We develop a simulation model to study the operational performance of the air transport system when airports operate at degraded capacity rather than completely shutting down. Our analyses show that the system deteriorates soon after disruptive events occur but returns to an acceptable level after a period of time. Static resilience of the airport network is captured by a phase transition in which a small change to airport capacity will result in a sharp change in system punctuality. After the phase transition point, decreasing airport capacity has little impact on system performance. Critical airports which have significant influence on the performance of whole system are identified, and we find that some of these cannot be detected based on the analysis of network structural indicators alone. Our work shows that air transport system's resilience can be well understood by combining network science and operational dynamics.

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In this paper, the heat transfer performance of the multi-chip (MC) LED module is investigated numerically by using a general analytical solution. The configuration of the module is optimized with genetic algorithm (GA) combined with a response surface methodology. The space between chips, the thickness of the metal core printed circuit board (MCPCB), and the thickness of the base plate are considered as three optimal parameters, while the total thermal resistance (R_tot) is considered as a single objective function. After optimizing objectives with GA, the optimal design parameters of three types of MC LED modules are determined. The results show that the thickness of MCPCB has a stronger influence on the total thermal resistance than other parameters. In addition, the sensitivity analysis is performed based on the optimum data. It reveals thatR_tot increases with the increased thickness of MCPCB, and reduces as the space between chips increases. The effect of the thickness of base plate is far less than that of the thickness of MCPCB. After optimization, three types of MC LED modules obtain lower T_j andR_tot. Moreover, the optimized modules can emit large luminous energy under high-power input conditions. Therefore, the optimization results are of great significance in the selection of configuration parameters to improve the performance of the MC LED module.

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The slot waveguide has attracted considerable attention because of its ability to confine and guide electromagnetic energy at the subwavelength scale beyond the diffraction limit. We propose a novel terahertz slot waveguide structure to achieve a better tradeoff between propagation length and field confinement capacity, the novel waveguide consisting of a two slot structure. The performances of terahertz waveguides were investigated using the finite-element method. The results demonstrated that the hybrid slot waveguide (HSW) provides significantly enhanced field confinement in low index slot regions: more than five times that of traditional low index slot waveguides (LISWs). An optimized HSW structure was achieved by tuning the tradeoff between mode confinement and propagation length. We also showed that its integration in conventional planar waveguide circuits was greatly improved compared with the LISWs, by comparing their crosstalk. The proposed new HSW structure has great potential to enable THz production of compact integration and could lead to true semiconductor-basedTHz applications with high performance.@en

The sensing properties of pristine, B-, Al-, Si-, and S-doped blue phosphorus (BP) monolayer to nitric oxide (NO) are theoretically investigated using density functional theory and non-equilibrium Green's function method. We systematically discuss the concentration effect, sensing mechanism, and current-voltage (I-V) response of BP adsorbing NO molecule. Our results show that the pristine BP exhibits a weak sensitivity for NO molecule, while B-, Al-, and Si-doped BP strongly adsorb NO via robust chemical bonds, meaning a good potential in metal-free catalysts, but unsuitable as NO sensors. Interestingly, S-doped BP is recommended as a desirable material for NO detection due to moderate adsorption energy and large charge transfer. Besides, the flowing current in S-doped BP can be significantly improved after NO adsorption under the same bias voltage. Therefore, S-doped BP could be a good candidate as an NO sensor.

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