Controlling P and B diffusion during polysilicon formation

Conference paper (2018)

Authors

M.W.P.E. Lamers ECN Solar Energy
Paula Bronsveld ECN Solar Energy
Ji Liu ECN Solar Energy
A.W. Weeber ECN Solar Energy, Photovoltaic Materials and Devices - EEMCS
Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
Copyright: © 2018 M.W.P.E. Lamers, Paula Bronsveld, Ji Liu, A.W. Weeber
DOI: https://doi.org/10.1063/1.5049274
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Published Date

2018

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

High quality passivating contacts can be realized by using the combination of a thin interfacial oxide (SiOx) and doped polysilicon (polySi). Recombination losses are minimized by providing very good passivation between the thin hydrogenated oxide and the cSi, a high field effect by the highly doped polySi [1-2], combined with the low level penetration of dopants in the wafer [2-3]. To realize this low level in-diffusion of dopants, several interacting options are evaluated in this work: the quality of the thin oxide layer (growth method), combined with a diffusion blocking method (nitridation), doping concentration levels in the polySi and temperature of diffusion. It is shown that for Phosphorus (P)-doped polySi, in-diffusion can be reduced by adding an i-layer in between the oxide and the highly doped polySi, lowering the overall doping level in the system slightly. For Boron (B)-doped polySi, in-diffusion can be blocked by nitridation of the SiO2 layer.

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