Electromigration-induced local dewetting in Cu films

Conference paper (2023)

Authors

Yaqian Zhang Electronic Components, Technology and Materials - EEMCS
Y. Zhang Electronic Components, Technology and Materials - EEMCS
J. Mo Electronic Components, Technology and Materials - EEMCS
Jiarui Mo Electronic Components, Technology and Materials - EEMCS
Z. Cui Electronic Components, Technology and Materials - EEMCS
Sten Vollebregt Electronic Components, Technology and Materials - EEMCS
S. Vollebregt Electronic Components, Technology and Materials - EEMCS
Guoqi Zhang Electronic Components, Technology and Materials - EEMCS
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2023 Y. Zhang, J. Mo, Z. Cui, S. Vollebregt, Kouchi Zhang
DOI: https://doi.org/10.1109/IITC/MAM57687.2023.10154761
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Published Date

2023

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

The continuous downscaling of microelectronics has introduced many reliability issues on interconnect. Electromigration and dewetting are major reliability concerns in high-temperature micro- and nanoscale devices. In this paper, the local dewetting of copper thin film during the electromigration test was first found and investigated. When the high current was applied, the dewetted copper forming around the edge was observed at the cathode of the conductor. Furthermore, the effect of temperature and conductor size on local dewetting was investigated. Our proposed mechanism for local dewetting is in good agreement with experimental findings.

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