A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit

Journal article (2023)

Authors

Jingping Zhang Chongqing University

Houcai Luo Chongqing University

Huan Wu Chongqing University

Zeping Wang Chongqing University

Bofeng Zheng Chongqing University

Kouchi Zhang Electronic Components, Technology and Materials -

Guoqi Zhang Electronic Components, Technology and Materials -

Xianping Chen Chongqing University

Research Group

Electronic Components, Technology and Materials () (TU Delft)

DOI: https://doi.org/10.1088/1402-4896/ad049b

Switching loss SG 4H-SiC MOSFET Cgd HF-FOM Qgd

To reference this document use:

http://resolver.tudelft.nl/uuid:ee2d471b-2b4a-490d-95b8-85b494d7a503

More Info

expand_more

Published Date

2023

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

A novel 4H-SiC Multiple Stepped SGT MOSFET (MSGT-MOSFET) is presented and investigated utilizing TCAD simulations in this paper. We have quantitatively studied the characteristics of the device through simulation modeling and physical model calculations, and comparatively analyzed the performance and application prospects of this novel device. The gate-to-drain capacitance (C_gd) and gate-to-drain charge (Q_gd) of the MSGT-MOSFET are significantly reduced in comparison with the double trench MOSFET (DT-MOSFET) and the conventional SGT MOSFET (CSGT-MOSFET), due to the reduction of the overlapping area of the split gate (SG) structure and drift region. Therefore, the obtained high frequency figure of merit (HF-FOM) defined as [R_on × C_gd] reduced by 23.9% compared with DT-MOSFET and CSGT-MOSFET. And the HF-FOM [R_on × Q_gd] for the MSGT-MOSFET significantly decreased by 71% and 50%, respectively, compared to that of the DT-MOSFET and CSGT-MOSFET. Furthermore, the switching loss is also simulated and calculated. And the total switching loss of the proposed MSGT-MOSFET realizes 42.9% and 21.7% reduction in comparison with the DT-MOSFET and CSGT-MOSFET. The overall enhanced performances suggest that the MSGT-MOSFET is an excellent choice for high frequency power electronic applications.

Files

Zhang_2023_Phys._Scr._98_12595... (pdf)

(pdf | 1.48 Mb)

- Embargo expired in 03-06-2024

Unknown license