Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

Conference paper (2017)

Authors

R. Sokolovskij State Key Laboratory of Solid State Lighting
E. Iervolino Southern University of Science and Technology
Changhui Zhao Southern University of Science and Technology
F. Wang Southern University of Science and Technology
Hongyu Yu Southern University of Science and Technology
F. Santagata Electronic Components, Technology and Materials - EEMCS
Pasqualina M Sarro Electronic Components, Technology and Materials - EEMCS
Pasqualina M. Sarro Electronic Components, Technology and Materials - EEMCS
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Guoqi Zhang Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2017 R. Sokolovskij, E. Iervolino, Changhui Zhao, F. Wang, Hongyu Yu, F. Santagata, Pasqualina M Sarro, Kouchi Zhang
DOI: https://doi.org/10.1109/ICSENS.2017.8234419
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Published Date

2017

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios Wg/Lg from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient response are directly related to the sensor gate electrode Wg/Lg ratio. The obtained results demonstrated a 217 % increase in sensitivity and 4630 % increase in sensing current variation at 500 ppm H2 for a Wg/Lg from 0.25 to 10. In addition, the detection limit was lowered to 5 ppm. Transient characteristics demonstrated faster sensor response to H2, but slower recovery rates with increasing ratio.

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