Integrated Waveguide Power Combiners with Artificial dielectrics for mm-Wave Systems

Conference paper (2017)

Authors

Z. Hu Electronics -

M. Alonso Del Pino Electronics - , National Aeronautics and Space Administration, NASA

D. Cavallo Tera-Hertz Sensing -

H. Thippur Shivamurthy Electronics -

M. Spirito Electronics -

Research Group

Electronics () (TU Delft)

Silicon Power combiner Artificial dielectrics Waveguide Si BiCMOS Impedance Elemental semiconductors Dielectric materials Waveguides Prototypes Pins Probes Power combiners Power combiners BiCMOS integrated circuits Artificial dielectric BiCMOS technology implementation E field probes N:1 power combiner Back-end-of-line Back-to-back-combiner operation Capacitive resonance Frequency 240.0 GHz to 310.0 GHz Full wave EM simulations Full-wave electromagnetic simulations Input feeding Insertion losses Integrated waveguide power combiners Mm-wave systems Power combiner operation Signal summation Silicon technologies Single transverse plane Synthetic waveguides (sub)millimeter-wave Integrated circuit

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Published Date

2017

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronics

Abstract

In this contribution we present a new class of N:1 power combiner based on synthetic waveguides integrated in silicon technologies back-end-of-line. The input feeding is based on (N) E field probes employing capacitive resonance, feeding a waveguide with artificial dielectrics (ADs). The signal summation occurs on a single transverse plane, thus providing insertion losses which do not scale with the number of inputs. This results in a combiner more compact and without restriction in the number of inputs compared to the traditional power of two (2N) combiners. The power combiner operation is presented in a BiCMOS technology implementation and analyzed by means of full wave electromagnetic (EM) simulations. Finally, the experimental results of an integrated 4:1 back-to-back-combiner operating in the 240-310GHz band is presented and compared with the full EM model.

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