A Novel Partial Carrier Stored and Hole Path IGBT for Ultralow Turn-Off Loss and On-State Voltage With High EMI Noise Controllability

Conference paper (2019)

Authors

Shaogang Wang Chongqing University

C. Tan Electronic Components, Technology and Materials - , Chongqing University

Liming Wang Chongqing University

Houcai Luo Chongqing University

Guoqi Zhang Electronic Components, Technology and Materials -

Kouchi Zhang Electronic Components, Technology and Materials -

Xianping Chen Chongqing University

Research Group

Electronic Components, Technology and Materials () (TU Delft)

IGBT EMI noise Hole path On-state voltage Partial carrier layer Turn-off loss

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http://resolver.tudelft.nl/uuid:96e9705b-d187-4e3f-8caf-240fd86ed388

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Published Date

01-03-2019

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

A partial carrier stored and hole path floating dummy shield trench IGBT (PCS-FD-IGBT) is proposed and investigated by simulation. Under E_off of 8mJ/cm², the V_CE(sat)) of 1200V class PCS-FD-IGBT is 1.223V, which is 11.1% and 2.2% less than CON-FD-IGBT and HP-FD-IGBT. Besides, the EMI noise of PCS-FD-IGBT is suppressed at a lower level (dV/dt is below 80kV/μs). Moreover, the PCS-FD-IGBT improves the gate drive controllability to easily adapt the larger range of system inductance.

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