Characterization of top-gated Si/SiGe devices for spin qubit applications

Conference paper (2019)

Authors

C.A. Volk Kavli institute of nanoscience Delft, University of Copenhagen, QCD/Vandersypen Lab - QuTech Advanced Research Centre , QuTech Advanced Research Centre, Services

Anasua Chatterjee University of Copenhagen

Ferdinand Kuemmeth University of Copenhagen

Research Group

QCD/Vandersypen Lab (QuTech Advanced Research Centre) (TU Delft)

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http://resolver.tudelft.nl/uuid:8f5a465f-1dbf-4634-bd46-af1ee5d12f2f

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Published Date

2019

Language

English

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Faculty

QuTech Advanced Research Centre

Department

Quantum Computing Division

Research Group

QCD/Vandersypen Lab

Abstract

Spins in gate-defined silicon quantum dots are at the forefront of solid-state qubit research. We characterize top-gated devices fabricated from Si/SiGe heterostructures, demonstrating the formation of stable double and triple quantum dots with proximal charge-sensing dots. We also demonstrate fabrication of linear dot arrays with overlapping gate technology, thereby significantly increasing the density of control electrodes relative to our single-gate-layer devices.