Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications

Conference paper (2023)

Authors

Yunfan Niu Student

J. Mo Electronic Components, Technology and Materials -

Jiarui Mo Electronic Components, Technology and Materials -

Alexander May Fraunhofer Institute for Integrated Systems and Devices Technology IISB

Mathias Rommel Fraunhofer Institute for Integrated Systems and Devices Technology IISB

Chiara Rossi Fraunhofer Institute for Integrated Systems and Devices Technology IISB

J. Romijn Microelectronics

Guoqi Zhang Electronic Components, Technology and Materials -

Kouchi Zhang Electronic Components, Technology and Materials -

Sten Vollebregt Electronic Components, Technology and Materials -

S. Vollebregt Electronic Components, Technology and Materials -

Department

Microelectronics

DOI: https://doi.org/10.1109/SENSORS56945.2023.10325061

Silicon carbide Analog-to-digital converter Harsh-environment

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Published Date

2023

Language

English

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Department

Microelectronics

Abstract

This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor (CMOS) technology developed by Fraunhofer IISB. Two types of ADCs, i.e., a 4-bit flash ADC and a 6-bit successive-approximation (SAR) ADC, are designed and simulated up to 300 degrees Celsius. The measurement results show that the 4-bit SiC flash ADC can operate reliably up to at least 200 degrees Celsius, which outperforms the Si counterpart regarding the maximum operating temperature.

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