Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach

Conference paper (2018)

Authors

Z. Cui Chongqing University, Electronic Components, Technology and Materials - EEMCS
Yingying Zhang Chongqing University
Qun Yang Chongqing University
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Guoqi Zhang Electronic Components, Technology and Materials - EEMCS
Xianping Chen Chongqing University
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2018 Z. Cui, Yingying Zhang, Qun Yang, Kouchi Zhang, Xianping Chen
DOI: https://doi.org/10.1109/EDTM.2018.8421434
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Published Date

2018

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

Interfacial properties of Cu/SiO2 in semiconductor devices has been a challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. The Cu and SiO2 are bonded by three types of chemical bonds, which cause three atomistic interfacial structures. The fracture of Cu-O and Cu-Si bonded interfaces occur at the interface, however, the fracture for Cu-OO interface occurs at copper layer near the interface, indicating two different fracture criterions coexist in Cu/SiO2 system.

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