X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

Journal article (2011)

Authors

N Hrauda External organisation

J. Zhang Electronic Components, Technology and Materials -

L.K. Nanver Electronic Components, Technology and Materials -

J Moers External organisation

D. Grützmacher External organisation

G Baur External organisation

E Wintersberger External organisation

T Etzelstorfer External organisation

B Mandl External organisation

J Stangl External organisation

D Carbone External organisation

V Holy External organisation

V. Jovanovic Electronic Components, Technology and Materials -

C Biasotto Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

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More Info

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Published Date

2011

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials