Mobility and Decay Dynamics of Charge Carriers in One-Dimensional Selenium van der Waals Solid

Journal article (2017)

Authors

P. Bhaskar ChemE/Opto-electronic Materials - AS
A.W. Achtstein Technical University of Berlin
S.L. Diedenhofen ChemE/Opto-electronic Materials - AS
L.D.A. Siebbeles ChemE/Opto-electronic Materials - AS
Research Group
ChemE/Opto-electronic Materials (AS) (TU Delft)
Copyright: © 2017 P. Bhaskar, A.W. Achtstein, S.L. Diedenhofen, L.D.A. Siebbeles
DOI: https://doi.org/10.1021/acs.jpcc.7b05183
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Published Date

31-08-2017

Language

English

Faculty

Applied Sciences

Department

ChemE/Chemical Engineering

Research Group

ChemE/Opto-electronic Materials

Abstract

Trigonal selenium is a semiconducting van der Waals solid that consists of helical atomic chains. We studied the mobility and decay dynamics of excess electrons and holes moving along the selenium chains. Excess charge carriers were generated by irradiation of powdered selenium with 3 MeV electron pulses. Their mobility and decay via trapping or recombination was studied by time-resolved microwave conductivity measurements as a function of temperature. The mobility of charge carriers along the Se chains is at least ca. 0.5 cm2·V-1·s-1 at room temperature. Charges decay predominantly by trapping at defects. The appreciable mobility, together with the potential for large-scale production of Se wires by liquid exfoliation, makes this material of great interest for use in nanoelectronics.