Solid-phase crystallization of ultra high growth rate amorphous silicon films

Journal article (2012)

Authors

K Sharma External organisation
MV Ponomarev External organisation
MA Verheijen External organisation
O Kunz External organisation
M van de Sanden External organisation
M Creatore External organisation
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Published Date

2012

Language

English

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Abstract

In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11-60 nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (similar to 1.5 mu m) polycrystalline silicon was obtained after SPC of high growth rate (similar to 25 nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development. (C)