A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

Conference paper (2012)

Authors

K. Souri Electronic Instrumentation - EEMCS
Y. Chae Electronic Instrumentation - EEMCS
Kofi A.A. Makinwa Electronic Instrumentation - EEMCS
K.A.A. Makinwa Electronic Instrumentation - EEMCS
Research Group
Electronic Instrumentation (EEMCS) (TU Delft)
Copyright: © 2012 K. Souri, Y. Chae, K.A.A. Makinwa
DOI: https://doi.org/10.1109/ISSCC.2012.6176978
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Published Date

2012

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20× less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2 nd -order ΔΣ conversion.

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