Investigation of Unclamped Inductive Switch Characteristics in 4H-SiC MOSFETs With Different Cell Topologies

Journal article (2023)

Authors

Huan Wu Chongqing University

Houcai Luo Chongqing University

Jingping Zhang Chongqing University

Bofeng Zheng Chongqing University

Lei Lang Chongqing University

Zeping Wang Chongqing University

Kouchi Zhang Electronic Components, Technology and Materials -

Guoqi Zhang Electronic Components, Technology and Materials -

Xianping Chen Chongqing University

Research Group

Electronic Components, Technology and Materials () (TU Delft)

DOI: https://doi.org/10.1109/TED.2022.3233816

Failure analysis Avalanche Cell topologies Silicon carbide (SiC) planar MOSFET Unclamped inductive switch (UIS) test

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Published Date

2023

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

To investigate the unclamped inductive switch (UIS) characteristics, 1200 V silicon carbide (SiC) planar MOSFETs with four cell topologies of linear, current sharing linear, square, and hexagon are designed and manufactured. The experimental platform was built and tested. The results show that the single pulse avalanche energy density of the linear cell topology is 1.69 times higher than that of the square and 1.49 times that of the hexagon. Further, the UIS process is simulated by using physical simulation, which shows that the avalanche energy was concentrated near the corner of the P-base region in the UIS mode. From this, the avalanche energy distribution differences of the four cell topologies were analyzed and compared. A theoretical model of avalanche heating per unit area is proposed, which shows that the avalanche energy density is inversely proportional to the proportion of avalanche energy concentration region. This study may contribute to the cell topology design of SiC MOSFETs under the application scenario with high avalanche reliability requirements.

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